Superconducting parametric amplifiers have great promise for quantum-limited readout of superconducting qubits and detectors. Until recently, most superconducting parametric amplifiers had been based on resonant structures, limiting their bandwidth a
nd dynamic range. Broadband traveling-wave parametric amplifiers based both on the nonlinear kinetic inductance of superconducting thin films and on Josephson junctions are in development. By modifying the dispersion property of the amplifier circuit, referred to as dispersion engineering, the gain can be greatly enhanced and the size can be reduced. We present two theoretical frameworks for analyzing and understanding such parametric amplifiers: (1) generalized coupled-mode equations and (2) a finite difference time domain (FDTD) model combined with a small signal analysis. We show how these analytical and numerical tools may be used to understand device performance.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures
in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8times10^5$, while thicker SiN buffer layers led to reduced $Q_i$s at low power.
We present measurements of the low--temperature excess frequency noise of four niobium superconducting coplanar waveguide microresonators, with center strip widths $s_r$ ranging from 3 $mu$m to 20 $mu$m. For a fixed internal power, we find that the f
requency noise decreases rapidly with increasing center strip width, scaling as $1/s_r^{1.6}$. We show that this geometrical scaling is readily explained by a simple semi-empirical model which assumes a surface distribution of independent two-level system fluctuators. These results allow the resonator geometry to be optimized for minimum noise.
