Twisting two layers into a magic angle (MA) of ~1.1{deg} is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works
focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle {theta} changes from 1.25{deg} at one end to 1.43{deg} at the other. For {theta}=1.25{deg}, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moire unite cell. When {theta}>1.25{deg}, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moire unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.
Many proposals in exploring topological quantum computation are based on superconducting quantum devices constructed on materials with strong spin-orbit coupling (SOC). For these devices, a full control on both the magnitude and the spatial distribut
ion of the supercurrent would be highly demanded, but has been elusive up to now. We constructed proximity-type Josephson junction on nanoplates of Bi2O2Se, a new emerging semiconductor with strong SOC. Through electrical gating, we show that the supercurrent can be fully turned ON and OFF, and its real-space pathways can be configured either through the bulk or along the edges. Our work demonstrates Bi2O2Se as a promising platform for constructing multifunctional hybrid superconducting devices as well as for searching for topological superconductivity.
We report on the successful synthesis and low-temperature electron transport investigations of a new form of material - Bi2O2Se semiconducting nanowires. Gate-tunable 0- and $pi$-h/e (h is the Planck constant and e the elementary charge) periodic res
istance oscillations in longitudinal magnetic field were observed unexpectedly, demonstrating novel quasi-ballistic, phase-coherent surface states in Bi2O2Se nanowires. By reaching a very good agreement between the calculated density of states and the experimental data, we clarified the mechanism to be the one dimensional subbands formed along the circumference of the nanowire rather than the usually considered Aharonov-Bohm interference. A qualitative physical picture based on downward band bending associated with the complex band structure is proposed to describe the formation of the surface states.
