We report individual confinement and two-axis qubit operations of two electron spin qubits in GaAs gate-defined sextuple quantum dot array with integrated micro-magnet. As a first step toward multiple qubit operations, we demonstrate coherent manipul
ations of three singlet-triplet qubits showing underdamped Larmor and Ramsey oscillations in all double dot sites. We provide an accurate measure of site site-dependent field gradients and rms electric and magnetic noise, and we discuss the adequacy of simple rectangular micro-magnet for practical use in multiple quantum dot arrays. We also discuss current limitations and possible strategies for realizing simultaneous multi multi-qubit operations in extended linear arrays.
We report the measurement of spin current induced charge accumulation, the inverse Edelstein effect (IEE), on the surface of a candidate topological Kondo insulator SmB6 single crystal. Robust surface conduction channel of SmB6 has been shown to exhi
bit large degree of spin-momentum locking, and spin polarized current through an external ferromagnetic contact induces the spin dependent charge accumulation on the surface of SmB6. The dependences of the IEE signal on the bias current, an external magnetic field direction and temperature are consistent with the anticlockwise spin texture for the surface band in SmB6 in the momentum space, and the direction and magnitude of the effect compared with the normal Edelstein signal are clearly explained by the Onsager reciprocal relation. Furthermore, we estimate spin-to-charge conversion efficiency, the IEE length, as 4.46 nm that is an order of magnitude larger than the efficiency found in other typical Rashba interfaces, implying that the Rashba contribution to the IEE signal could be small. Building upon existing reports on the surface charge and spin conduction nature on this material, our results provide additional evidence that the surface of SmB6 supports spin polarized conduction channel.
Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely used for
the spin state discrimination of two-electron singlet-triplet (ST$_0$) qubits; however, the single-shot measurement fidelity is limited by either the low signal contrast, or the short lifetime of the triplet state at the PSB energy detuning, especially due to strong mixing with singlet states at large magnetic field gradients. Ultimately, the limited single-shot measurement fidelity leads to low visibility of quantum operations. Here, we demonstrate an alternative method to achieve spin-to-charge conversion of ST$_0$ qubit states using energy selective tunneling between doubly occupied quantum dots (QDs) and electron reservoirs. We demonstrate a single-shot measurement fidelity of 90% and an S-T$_0$ oscillation visibility of 81% at a field gradient of 100 mT (~ 500 $MHzcdot h cdot(g^{*}cdot mu_B)^{-1}$); this allows single-shot readout with full electron charge signal contrast and, at the same time, long and tunable measurement time with negligible effect of relaxation even at strong magnetic field gradients. Using an rf-sensor positioned opposite to the QD array, we apply this method to two ST$_0$ qubits and show high-visibility readout of two individual single-qubit gate operations is possible with a single rf single-electron transistor sensor. We expect our measurement scheme for two-electron spin states can be applied to various hosting materials and provides a simplified and complementary route for multiple qubit state detection with high accuracy in QD-based quantum computing platforms.
The Kondo insulator compound SmB6 has emerged as a strong candidate for the realization of a topologically nontrivial state in a strongly correlated system, a topological Kondo insulator, which can be a novel platform for investigating the interplay
between nontrivial topology and emergent correlation driven phenomena in solid state systems. Electronic transport measurements on this material, however, so far showed only the robust surface dominated charge conduction at low temperatures, lacking evidence of its connection to the topological nature by showing, for example, spin polarization due to spin momentum locking. Here, we find evidence for surface state spin polarization by electrical detection of a current induced spin chemical potential difference on the surface of a SmB6 single crystal. We clearly observe a surface dominated spin voltage, which is proportional to the projection of the spin polarization onto the contact magnetization, is determined by the direction and magnitude of the charge current and is strongly temperature dependent due to the crossover from surface to bulk conduction. We estimate the lower bound of the surface state net spin polarization as 15 percent based on the quantum transport model providing direct evidence that SmB6 supports metallic spin helical surface states.
