Based on tight-binding model and a generalized Greens function method in Landauer-Buttiker formalism, the effects of quantum interference (QI) on the noise power and Fano factor of an armchair graphene nanoribbon (aGNR) sandwiched between infinite si
ngle wall carbon nanotube (SWCNT) as a CNT/aGNR/CNT system are numerically investigated. In this work, changing the aGNR to CNT electrodes contact positions and applying the magnetic field as two sources of QI are considered. We have found different Fano-resonance and anti-resonance peaks on the transmission probability in the presence of QI sources that show profound effects on the current-voltage characteristics and noise power. Our results also show that the shot noise characteristic, either in the Poisson limit ($F=1$) or sub-Poisson limit ($F<1$), and also maximum value of the Fano factor strongly depend on the aGNR to CNT electrodes contact positions and the magnetic field strength. These results can be useful for designing the future nano-electronic devices.
Using the tight-binding model and the generalized Greens function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We s
how how the quantum interference sources, different contact positions and local gate, can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of anti-resonant states in the transmission probability function using a simple graphical scheme (introduced in Ref.[Phys. Chem. Chem. Phys, 2011, 13, 1431]) for different geometries of the contacts between the benzene molecule and semiconductor(silicon and titanium dioxide) electrodes.
