A very recent article [(1) E. Zakka-Bajjani et al., PRL104, 206802 (2010)] has addressed the problem of how the statistics of electrons crossing a quantum conductor influences that of the photons they emit. It is however not clear that the detection
used in [1] is sensitive to emitted photons and not to the overall electromagnetic fluctuations, which include vacuum fluctuations. We show that the proof in [1] that non-symmetrized noise is detected is erroneous: supposing that the detection simply takes the square of the voltage, i.e. is sensitive to vacuum fluctuations, leads to identical results. We demonstrate that all the results can be explained in terms of usual gaussian voltage fluctuations instead of photon statistics. Finally, it is found in [1] that the photon noise is gaussian for a tunnel junction, for which the electron counting statistics is poissonian. We show that this result is beyond the experimental sensitivity by at least one order of magnitude, and thus is also incorrect.
We report the first experimental data of the third moment of current fluctuations in a tunnel junction. We show that both in the classical and quantum regimes (low or high frequency as compared to voltage), it is given by $S_{I^3}=e^2I$. We discuss environmental effects in both regimes.
We report the first measurement of high order cumulants of the current fluctuations in an avalanche diode run through by a stationary dc current. Such a system is archetypic of devices in which transport is governed by a collective mechanism, here ch
arge multiplication by avalanche. We have measured the first 5 cumulants of the probability distribution of the current fluctuations. We show that the charge multiplication factor is distributed according to a power law that is different from that of the usual avalanche below breakdown, when avalanches are well separated.
The existence of the third cumulant $S_{3}$ of voltage fluctuations has demonstrated the non-Gaussian aspect of shot noise in electronic transport. Until now, measurements have been performed at low frequency, textit{i.e.} in the classical regime $hb
ar omega < eV, k_BT$ where voltage fluctuations arise from charge transfer process. We report here the first measurement of $S_3$ at high frequency, in the quantum regime $hbar omega > eV, k_BT$. In this regime, experiment cannot be seen as a charge counting statistics problem anymore. It raises central questions of the statistics of quantum noise: 1) the electromagnetic environment of the sample has been proven to strongly influence the measurement, through the possible modulation of the noise of the sample. What happens to this mechanism in the quantum regime? 2) For $hbar omega > eV$, the noise is due to zero point fluctuations and keeps its equilibrium value: $S_2= G hbar omega$ with $G$ the conductance of the sample. Therefore, $S_2$ is independent of the bias voltage and no photon is emitted by the conductor. Is it possible, as suggested by some theories, that $S_3 eq 0$ in this regime? With regard to these questions, we give theoretical and experimental answers to the environmental effects showing that they involve dynamics of the quantum noise. Using these results, we investigate the question of the third cumulant of quantum noise in the a tunnel junction.
We report the first measurement of the emph{dynamical response} of shot noise (measured at frequency $omega$) of a tunnel junction to an ac excitation at frequency $omega_0$. The experiment is performed in the quantum regime, $hbaromegasimhbaromega_0
gg k_BT$ at very low temperature T=35mK and high frequency $omega_0/2pi=6.2$ GHz. We observe that the noise responds in phase with the excitation, but not adiabatically. The results are in very good agreement with a prediction based on a new current-current correlator.
