We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enha
ncement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver tak
ing into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.
