The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~
MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscop
y. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized $p$-SiGe/Ge/SiGe heterostructure.
The magnetoresistance components $rho_{xx}$ and $rho_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements
demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$times10^{11}$,cm$^{-2}$. This transition is due to crossing of the 0$uparrow$ and 1$downarrow$ Landau levels. However, in another sample, with $p$=7.2$times10^{10}$,cm$^{-2}$, the 0$uparrow$ and 1$downarrow$ Landau levels coincide for angles $Theta$=0-70$^{text{o}}$. Only for $Theta$ > 70$^{text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the
main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
We report the results of an experimental study of the magnetoresistance $rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$times10^{10}$ cm$^{-2}$ and $p$=2$times10^{11}$ cm$^{-2}$. The research was performed in the t
emperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{parallel}$ against the current $I$: $B_{parallel} perp I$ and $B_{parallel} parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $rho_{xx}$ demonstrates the metallic characteristics ($d rho_{xx}/dT>$0). However, at $B_{parallel}$ =7.2 T the derivative $d rho_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{parallel} cong$ 13 T there is a transition from the dependence $ln(Deltarho_{xx} / rho_{0})propto B_{parallel}^2$ to the dependence $ln(Deltarho_{xx} / rho_{0})propto B_{parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surf
ace acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ u$=1) to formation of the Wigner glass in the extreme quantum limit ($Bgtrsim 14$, $T lesssim 0.8$ K).
