Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective determinatio
n of the Mott-Hubbard transition during the isothermal pressure sweep. Above the critical end point, the metal-insulator crossing, determined by the thermoelectric effect minimum value, is not found to coincide with the maximum of the derivative of the conductivity as a function of pressure. We show that the critical exponents of the Mott-Hubbard transition fall within the Ising universality class regardless of the dimensionality of the system.
Measurements of macroscopic properties have indicated that the bond-disordered spin-gap system (CH3)2CHNH3-Cu(ClxBr1-x)3 is gapless when x is between 0.44 and 0.87. Using muon spin relaxation to investigate microscopic properties of sample with x=0.3
5, we observed a dynamical spin fluctuation, whose characteristic frequency decreases with decreasing temperature, indicating a magnetic ground state.
