A Mn4 single-molecule magnet displays asymmetric Berry-phase interference patterns in the transverse-field (HT) dependence of the magnetization tunneling probability when a longitudinal field (HL) is present, contrary to symmetric patterns observed f
or HL=0. Reversal of HL results in a reflection of the transverse-field asymmetry about HT=0, as expected on the basis of the time-reversal invariance of the spin-orbit Hamiltonian which is responsible for the tunneling oscillations. A fascinating motion of Berry-phase minima within the transverse-field magnitude-direction phase space results from a competition between noncollinear magnetoanisotropy tensors at the two distinct Mn sites.
In this article we discuss the design and implementation of a novel microstrip resonator which allows for the absolute control of the microwaves polarization degree for frequencies up to 30 GHz. The sensor is composed of two half-wavelength microstri
p line resonators, designed to match the 50 Ohms impedance of the lines on a high dielectric constant GaAs substrate. The line resonators cross each other perpendicularly through their centers, forming a cross. Microstrip feed lines are coupled through small gaps to three arms of the cross to connect the resonator to the excitation ports. The control of the relative magnitude and phase between the two microwave stimuli at the input ports of each line allows for tuning the degree and type of polarization of the microwave excitation at the center of the cross resonator. The third (output) port is used to measure the transmitted signal, which is crucial to work at low temperatures, where reflections along lengthy coaxial lines mask the signal reflected by the resonator. EPR spectra recorded at low temperature in an S= 5/2 molecular magnet system show that 82%-fidelity circular polarization of the microwaves is achieved over the central area of the resonator.
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated from a two
dimensional electron gas GaAs/AlGaAs heterostructure in the form of a cross, with a 50x50 um2 sensing area. A high-frequency microstrip resonator is coupled with two small gaps to a transmission line with a 50 Ohms impedance. Different resonator lengths are used to obtain quasi-TEM fundamental resonant modes in the frequency range 10-30 GHz. The resonator is positioned on top of the active area of the Hall-effect magnetometer, where the magnetic field of the fundamental mode is largest, thus optimizing the conversion of microwave power into magnetic field at the sample position. The two gaps coupling the resonator and transmission lines are engineered differently. The gap to the microwave source is designed to optimize the loaded quality factor of the resonator (Q = 150) while the gap for the transmitted signal is larger. This latter gap minimizes losses and prevents distortion of the resonance while enabling measurement of the transmitted signal. The large filling factor of the resonator permits sensitivities comparable to that of high-quality factor resonant cavities. The integrated sensor enables measurement of the magnetization response of micron scale samples upon application of microwave fields. In particular, the combined measurement of the magnetization change and the microwave power under cw microwave irradiation of single crystal of molecular magnets is used to determine of the energy relaxation time of the molecular spin states. In addition, real time measurements of the magnetization dynamics upon application of fast microwave pulses are demonstrated
