Epitaxial Y3Fe5O12 thin films have been deposited by off-axis sputtering, which exhibit excellent crystalline quality, enabling observation of large spin pumping signals in Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers driven by cavity ferromagnetic resonance.
The inverse spin Hall voltages reach 2.10 mV and -5.26 mV in 5-mm long Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers, respectively, excited by a radio-frequency magnetic field of 0.3 Oe. From the ferromagnetic resonance linewidth broadening, the interfacial spin mixing conductance of 4.56E14 {Omega}-1m-2 and 2.30E14 {Omega}-1m-2 are obtained for Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers, respectively.
Ferromagnetic resonance (FMR) driven spin pumping is an emerging technique for injection of a pure spin current from a ferromagnet (FM) into a non-magnetic (NM) material without an accompanying charge current. It is widely believed that this pumping
proceeds exclusively via a short-range exchange interaction at the FM/NM interface. Here we report robust, long-range spin pumping from the ferrimagnetic double perovskite Sr2FeMoO6 (SFMO) into Pt across an insulating barrier up to 200 nm thick, and systematically rule out all known spurious effects. This result demonstrates dynamic spin injection over a distance far beyond the coupling range of the exchange interaction, exposing the need to consider other coupling mechanisms. The characteristic length scale for magnetic textures in Sr2FeMoO6 is approximately 150 nm, resulting from structural antiphase boundaries, thus raising the possibility that magnetic dipole coupling underlies the observed long range spin transfer. This discovery reveals a route to dynamic angular momentum transfer between a FM and a NM in the absence of mediation by itinerant electrons and promises new spin-functional devices employing long-range spin pumping.
In a recent Letter Scanlon and Watson reported their first principles results on hydrogen in Cu2O. Their main conclusions are: (1) an interstitial H in Cu2O prefers to occupy the tetrahedral site, which is coordinated with four Cu cations, in all thr
ee charge states (+1, neutral, and -1); (2) H will bind with a Cu vacancy and form an electrically active H-VCu defect complex, which is amphoteric with (+/0) and (0/-)transition levels at Ev + 0.1 and Ev + 1.1 eV, respectively. However, these two conclusions contradict two generally observed behaviors of H in oxides: (i) cationic H usually binds with an O atom, forming a single O-H bond, while the anionic H usually binds with cations with multi-coordination; (ii) H usually passivates cation vacancies in oxides. In this Comment, we explicitly show that with charge state +1, H prefers to bind with a single O anion rather than with four Cu cations and that H-VCu does not induce any defect levels inside the band gap.
