The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Excito
n lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.
