Microwave Package Design for Superconducting Quantum Processors

Solid-state qubits with transition frequencies in the microwave regime, such as superconducting qubits, are at the forefront of quantum information processing. However, high-fidelity, simultaneous control of superconducting qubits at even a moderate scale remains a challenge, partly due to the complexities of packaging these devices. Here, we present an approach to microwave package design focusing on material choices, signal line engineering, and spurious mode suppression. We describe design guidelines validated using simulations and measurements used to develop a 24-port microwave package. Analyzing the qubit environment reveals no spurious modes up to 11GHz. The material and geometric design choices enable the package to support qubits with lifetimes exceeding 350 {mu}s. The microwave package design guidelines presented here address many issues relevant for near-term quantum processors.

Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric regions contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.

Determining interface dielectric losses in superconducting coplanar waveguide resonators

Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in superconducting coplanar waveguide (CPW) resonators. By combining statistical characterization of sets of specifically designed CPW resonators on isotropically etched silicon substrates with detailed electromagnetic modeling, we determine the separate loss contributions from individual material interfaces and bulk dielectrics. This technique for analyzing interfacial TLS losses can be used to guide targeted improvements to qubits, resonators, and their superconducting fabrication processes.

Analysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonators

Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 $mu$m into the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance.