Critical current density (Jc), thermal activation energy (U0), and upper critical field (Hc2) of La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) superconductors are investigated from magnetic field dependent r{ho}(T) studies. The estimated upper critical field (
Hc2) has low values of 1.04 T for x = 0.2 and 1.41 T for x = 0.8. These values are lower than Sm free LaO0.5F0.5BiS2 superconductor (1.9 T). The critical current density (Jc) is estimated to be 1.35*105 A/cm2 and 5.07 *105 A/cm2 (2 K) for x = 0.2 and 0.8 respectively, using the Beans model. The thermal activation energy (U0/kB) is 61 K for x = 0.2 and 140 K for x =0.8 as calculated from Arrhenius plots at low magnetic field (1 T) and indicates a strong flux pinning potential which might be co-existing with applied magnetic field.
We have investigated the pressure effect on the newly discovered samarium doped La1-xSmxO0.5F0.5BiS2 superconductors. More than threefold increase in Tc (10.3 K) is observed with external pressure (at ~1.74 GPa at a rate of 4.08 K/GPa)) for x = 0.2 c
omposition. There is a concomitant large improvement in the quality of the superconducting transition. Beyond this pressure Tc decreases monotonously at the rate of -2.09 K/GPa. In the x = 0.8 sample, we do not observe any enhancement in Tc with application of pressure (up to 1.76 GPa). The semiconducting behavior observed in the normal state resistivity of both of the samples is significantly subdued with the application of pressure which, if interpreted invoking thermal activation process, implies that the activation energy gap of the carriers is significantly reduced with pressure. We believe these observations should generate further interest in the La1-xSmxO0.5F0.5BiS2 superconductors.
Crystal structure and properties of a new member of oxy-bismuth-sulfide SmO1-xFxBiS2 are reported here. The compounds SmO1-xFxBiS2 (x = 0.0 and 0.5) are found to be isostructural with LaOBiS2 and crystallize in the CeOBiS2 type structure (P4/nmm). Sm
substitution in LaO0.5F0.5BiS2, (La1-ySmyO0.5F0.5BiS2), leads to a gradual decrease in a-lattice constant however the c-lattice constant does not show such a gradual trend. Enhancement in Tc is achieved upon partially substituting La by smaller Sm ion. Maximum Tc ~ 4.6 K was observed for composition with y = 0.8. Disobeying this trend Tc disappears unexpectedly in composition SmO0.5F0.5BiS2 (y = 1.0). Both the undoped and F-doped (x = 0.0 and 0.5) compounds are paramagnetic exhibiting semiconducting behavior down to 2 K.
In this communication, we report the temperature dependence (3 to 300K) of the electrical resistivity of BiS2 based layered PrO0.5F0.5BiS2 superconductor at ambient and hydrostatic pressure of up to 3GPa. It is observed that Tc increases with pressur
e at the rate of dTc/dP=0.45/GPa for PrO0.5F0.5BiS2 compound. It is envisaged that one may increase the Superconducting transition temperature (Tc) of recently discovered PrO0.5F0.5BiS2 superconductor by applying hydrostatic external or internal chemical pressure via suitable on site substitutions.
We investigate the external hydrostatic pressure effect on the superconducting transition temperature (Tc) of new layered superconductors Bi4O4S3 and NdO0.5F0.5BiS2. Though the Tc is found to have moderate decrease from 4.8 K to 4.3 K (dTconset/dP =
-0.28 K/GPa) for Bi4O4S3 superconductor, the same increases from 4.6 K to 5 K (dTconset/dP = 0.44 K/GPa) upto 1.31 GPa followed by a sudden decrease from 5 K to 4.7 K upto 1.75 GPa for NdO0.5F0.5BiS2 superconductor. The variation of Tc in these systems may be correlated to increase or decrease of the charge carriers in the density of states under externally applied pressure.
