The behaviour of the cross-sectional polarization field is explored for thin nanowires of barium titanate from first-principles calculations. Topological defects of different winding numbers have been obtained, beyond the known textures in ferroelect
ric nanostructures. They result from the inward accommodation of the polarization patterns imposed at the surface of the wire by surface and edge effects. Close to a topological defect the polarization field orients out of the basal plane in some cases, maintaining a close to constant magnitude, whereas it virtually vanishes in other cases.
Multiferroic BiFeO3 ceramics have been doped with Ca. The smaller ionic size of Ca compared with Bi means that doping acts as a proxy for hydrostatic pressure, at a rate of 1%Ca=0.3GPa. It is also found that the magnetic Neel temperature (TNeel) incr
eases as Ca concentration increases, at a rate of 0.66K per 1%Ca (molar). Based on the effect of chemical pressure on TNeel, we argue that applying hydrostatic pressure to pure BiFeO3 can be expected to increase its magnetic transition temperature at a rate around ~2.2K/GPa. The results also suggest that pressure (chemical or hydrostatic) could be used to bring the ferroelectric critical temperature, Tc, and the magnetic TNeel closer together, thereby enhancing magnetoelectric coupling, provided that electrical conductivity can be kept sufficiently low.
Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, affects the functi
onal properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO$_3$ as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO$_3$ may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO$_3$ may be polar.
We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in sha
pe, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains.
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films onto carbon
nanotube electrodes with an aim of ultra-high integration density of FeRAMs (Tb/in2).
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was
partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric devices. It turns out that at reduced scales and dimensionalities the materials properties depend crucially on the intricacies of domain formation, that is, the way the crystal splits into regions with polarization oriented along the different energetically equivalent directions, typically at 180o and 90o from each other. Here we present a step forward in the manipulation and control of ferroelectric domains by the growth of thin films with regular self-patterned arrays of 90o domains only 7 nm wide. This is the narrowest width for 90o domains in epitaxial ferroelectrics that preserves the film lateral coherence, independently of the substrate.
