We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attai
n extremely large doping levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the doping concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the doping level and is not affected when changing the doped thickness. Furthermore, we characterised the doped Ge/Ge contact, showing that at high doping its contact resistance is the dominant contribution to the total contact resistance.
Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate phototrans
port in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to many other semiconducting nanowires and molecules. Our approach also allows to investigate the coupling of electron transport to surface acoustic waves in bulk Si and to electro-mechanical resonances in the nanowires.
We use microwave excitation to elucidate the dynamics of long superconductor / normal metal / superconductor Josephson junctions. By varying the excitation frequency in the range 10 MHz - 40 GHz, we observe that the critical and retrapping currents,
deduced from the dc voltage vs. dc current characteristics of the junction, are set by two different time scales. The critical current increases when the ac frequency is larger than the inverse diffusion time in the normal metal, whereas the retrapping current is strongly modified when the excitation frequency is above the electron-phonon rate in the normal metal. Therefore the critical and retrapping currents are associated with elastic and inelastic scattering, respectively.
We report the design and measurement of Superconducting/normal/superconducting (SNS) proximity DC squids in the long junction limit, i.e. superconducting loops interrupted by two normal metal wires roughly a micrometer long. Thanks to the clean inter
face between the metals, at low temperature a large supercurrent flows through the device. The dc squid-like geometry leads to an almost complete periodic modulation of the critical current through the device by a magnetic flux, with a flux periodicity of a flux quantum h/2e through the SNS loop. In addition, we examine the entire field dependence, notably the low and high field dependence of the maximum switching current. In contrast with the well-known Fraunhoffer-type oscillations typical of short wide junctions, we find a monotonous gaussian extinction of the critical current at high field. As shown in [15], this monotonous dependence is typical of long and narrow diffusive junctions. We also find in some cases a puzzling reentrance at low field. In contrast, the temperature dependence of the critical current is well described by the proximity effect theory, as found by Dubos {it et al.} [16] on SNS wires in the long junction limit. The switching current distributions and hysteretic IV curves also suggest interesting dynamics of long SNS junctions with an important role played by the diffusion time across the junction.
