Recent theoretical and experimental studies suggest that SmB$_6$ is the first topological Kondo insulator: A material in which the interaction between localized and itinerant electrons renders the bulk insulating at low temperature, while topological
surface states leave the surface metallic. While this would elegantly explain the materials puzzling conductivity, we find the experimentally observed candidates for both predicted topological surface states to be of trivial character instead: The surface state at $bar{Gamma}$ is very heavy and shallow with a mere $sim 2$ meV binding energy. It exhibits large Rashba splitting which excludes a topological nature. We further demonstrate that the other metallic surface state, located at $bar{X}$, is not an independent in-gap state as supposed previously, but part of a massive band with much higher binding energy (1.7 eV). We show that it remains metallic down to 1 K due to reduced hybridization with the energy-shifted surface 4$f$ level.
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin
polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
