We investigate the subgap bulk transport through short and wide superconducting hybrid structures based on HgTe quantum wells (QWs). We show that the differential conductance of a normal metal-insulator-superconductor (NIS) proximity structure behave
s in a qualitatively different way with respect to the topological phase of the HgTe QW. We compare the differential conductance for the NIS structure within the wave-matching method based on the Bogoliubov-de Gennes equation and the matrix method based on the normal-state scattering matrix and find that the two models agree for highly-doped N and S contacts. We also show that the effect of a possible Rashba spin-orbit interaction on the differential conductance can be significant for weakly doped N and S contacts. Our findings should be important in samples with a large aspect ratio where bulk contributions in transport are dominant.
Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic
bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.
We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter
regime and the validity of the effective model is scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.
