Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed
by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.
Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in to
tal conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.
The magnetization ground states (MGSs) for a nanosized Co hollow sphere, with the outer radius, R < 50 nm, have been studied numerically by micromagnetic simulation using object oriented micromagnetic framework (OOMMF). In addition to the originally
known single domain and vortex-curling states, a three dimensional onion state with a corresponding analytical expression is proposed and confirmed as one of the ground states. Two phase diagrams, one for a single crystalline and the other for a polycrystalline nanosphere, are obtained for the three MGSs. The result reveals that the magnetic anisotropy has a significant effect on the phase line in the diagrams. The finite temperature effect and the blocking properties of the nanosphere for the magnetization reversal are discussed.
The magnetic properties of the one dimensional (1D) monatomic chain of Co reported in a previous experimental work are investigated by a classical Monte Carlo simulation based on the anisotropic Heisenberg model. In our simulation, the effect of the
on-site uniaxial anisotropy, Ku, on each individual Co atom and the nearest neighbour exchange interaction, J, are accounted for. The normalized coercivity HC(T)/HC(TCL) is found to show a universal behaviour, HC(T)/HC(TCL) = h0(e^{TB/T}-e) in the temperature interval, TCL < T < TBCal, arising from the thermal activation effect. In the above expression, h0 is a constant, TBCal is the blocking temperature determined by the calculation, and TCL is the temperature above which the classical Monte Carlo simulation gives a good description on the investigated system. The present simulation has reproduced the experimental features, including the temperature dependent coercivity, HC(T), and the angular dependence of the remanent magnetization, MR(phi,theta), upon the relative orientation (phi,theta) of the applied field H. In addition, the calculation reveals that the ferromagnetic-like open hysteresis loop is a result of a slow dynamical process at T < TBCal. The dependence of the dynamical TBCal on the field sweeping rate R, the on-site anisotropy constant Ku, and the number of atoms in the atomic chain, N, has been investigated in detail.
