We investigate optically reconfigurable dielectric metamaterials at gigahertz frequencies. More precisely, we study the microwave response of a subwavelength grating optically imprinted into a semiconductor slab. In the homogenized regime, we analyti
cally evaluate the ordinary and extraordinary component of the effective permittivity tensor by taking into account the photo-carrier dynamics described by the ambipolar diffusion equation. We analyze the impact of semiconductor parameters on the gigahertz metamaterial response which turns out to be highly reconfigurable by varying the photogenerated grating and which can show a marked anisotropic behavior.
We theoretically investigate the terahertz dielectric response of a semiconductor slab hosting an infrared photoinduced grating. The periodic structure is due to the charge carries photo-excited by the interference of two tilted infrared plane waves
so that the grating depth and period can be tuned by modifying the beam intensities and incidence angles, respectively. In the case where the grating period is much smaller than the terahertz wavelength, we numerically evaluate the ordinary and extraordinary component of the effective permittivity tensor by resorting to electromagnetic full-wave simulation coupled to the dynamics of charge carries excited by infrared radiation. We show that the photoinduced metamaterial optical response can be tailored by varying the grating and it ranges from birefringent to hyperbolic to anisotropic negative dielectric without resorting to microfabrication.
We theoretically consider infrared-driven hyperbolic metamaterials able to spatially filtering terahertz radiation. The metamaterial is a slab made of alternating semiconductor and dielectric layers whose homogenized uniaxial response, at terahertz f
requencies, shows principal permittivities of different signs. The gap provided by metamaterial hyperbolic dispersion allows the slab to stop spatial frequencies within a bandwidth tunable by changing the infrared radiation intensity. We numerically prove the device functionality by resorting to full wave simulation coupled to the dynamics of charge carries photoexcited by infrared radiation in semiconductor layers.
We propose a hybrid soliton-based system consisting of a centrosymmetric photorefractive crystal, supporting photorefractive solitons, coupled to a vertical cavity surface emitting laser, supporting multistable cavity solitons. The composite nature o
f the system, which couples a propagative/conservative field dynamics to a stationary/dissipative one, allows to observe a more general and unified system phenomenology and to conceive novel photonic functionalities. The potential of the proposed hybrid system becomes clear when investigating the generation and control of cavity solitons by propagating a plane wave through electro-activated solitonic waveguides in the crystal. By changing the electro-activation voltage of the crystal, we prove that cavity solitons can be turned on and shifted with controlled velocity across the device section. The scheme can be exploited for applications to optical information encoding and processing.
