The phenomenological equations of motion for the relaxation of ordered phases of magnetized and polarized crystal phases can be developed in close analogy with one another. For the case of magnetized systems, the driving magnetic field intensity towa
rd relaxation was developed by Gilbert. For the case of polarized systems, the driving electric field intensity toward relaxation was developed by Khalatnikov. The transport times for relaxation into thermal equilibrium can be attributed to viscous sound wave damping via magnetostriction for the magnetic case and electrostriction for the polarization case.
We have formulated a relaxation mechanism for ferrites and ferromagnetic metals whereby the coupling between the magnetic motion and lattice is based purely on continuum arguments concerning magnetostriction. This theoretical approach contrasts with
previous mechanisms based on microscopic formulations of spin-phonon interactions employing a discrete lattice. Our model explains for the first time the scaling of the intrinsic FMR linewidth with frequency, and 1/M temperature dependence and the anisotropic nature of magnetic relaxation in ordered magnetic materials, where M is the magnetization. Without introducing adjustable parameters our model is in reasonable quantitative agreement with experimental measurements of the intrinsic magnetic resonance linewidths of important class of ordered magnetic materials, insulator or metals.
Nano granular metallic iron (Fe) and titanium dioxide (TiO$_{2-delta}$) were co-deposited on (100) lanthanum aluminate (LaAlO$_3$) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. The co-deposition
of Fe and TiO$_2$ resulted in $approx$ 10 nm metallic Fe spherical grains suspended within a TiO$_{2-delta}$ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 Gauss at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed well with the measured value. The film composite structure was characterized as p-type magnetic semiconductor at 300 K with a carrier density of the order of $ 10^{22} /{rm cm^3}$. The hole carriers were excited at the interface between the nano granular Fe and TiO$_{2-delta}$ matrix similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. From the large anomalous Hall effect directly observed in these films it follows that the holes at the interface were strongly spin polarized. Structure and magneto transport properties suggested that these PLD films have potential nano spintronics applications.
Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelect
ric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hall resistance measured above 50 K, the magnetoelectic resistance below 50 K is significantly larger and exhibits an even symmetry with respect to magnetic field reversal $Hto -H$. The measurement technique required attached electrodes in the plane of the film composite in order to measure voltage as a function of bias current and external magnetic field. To our knowledge, the composite films are unique in terms of showing magnetoelectric effects at low temperatures, $<$ 50 K, and anomalous Hall effects at high temperatures, $>$ 50 K.
