Pressure-induced Lifshitz transition in black phosphorus

In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with high carrier mobility and a direct, tunable bandgap. Of particular importance is the search for exotic electronic states in black phosphorus, which may amplify the materials potential beyond semiconductor devices. Here we show that a moderate hydrostatic pressure effectively suppresses the band gap and induces a Lifshitz transition from semiconductor to semimetal in black phosphorus; a colossal magnetoresistance is observed in the semimetallic phase. Quantum oscillations in high magnetic field reveal the complex Fermi surface topology of the semimetallic black phosphorus. In particular, a Dirac-like fermion emerges at around 1.2 GPa, which is continuously tuned by external pressure. The observed semi-metallic behavior greatly enriches black phosphoruss material property, and sets the stage for the exploration of novel electronic states in this material. Moreover, these interesting behaviors make phosphorene a good candidate for the realization of a new two-dimensional relativistic electron system, other than graphene.

Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario.