Heteroepitaxially grown bilayers of ferromagnetic La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO) on top of superconducting YBa$_2$Cu$_3$O$_7$ (YBCO) thin films were investigated by focusing on electric transport properties as well as on magnetism and orbital occ
upation at the interface. Transport measurements on YBCO single layers and on YBCO/LCMO bilayers, with different YBCO thickness $d_Y$ and constant LCMO thickness $d_L=50$,nm, show a significant reduction of the superconducting transition temperature $T_c$ only for $d_Y<10$,nm,with only a slightly stronger $T_c$ suppression in the bilayers, as compared to the single layers. X-ray magnetic circular dichroism (XMCD) measurements confirm recently published data of an induced magnetic moment on the interfacial Cu by the ferromagnetically ordered Mn ions, with antiparallel alignment between Cu and Mn moments. However, we observe a significantely larger Cu moment than previously reported, indicating stronger coupling between Cu and Mn at the interface. This in turn could result in an interface with lower transparency, and hence smaller spin diffusion length, that would explain our electric transport data, i.e.smaller $T_c$ suppression. Moreover, linear dichroism measurements did not show any evidence for orbital reconstruction at the interface, indicating that a large change in orbital occupancies through hybridization is not necessary to induce a measurable ferromagnetic moment on the Cu atoms.
Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO
$_2$ as a secondary phase could be avoided for $p_{O_2}ge 8 $Pa. However, transmission electron microscopy shows the presence of CeO$_2$ nanoclusters, even in those films which appear to be single phase in XRD. With O$_2$ annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La$_{0.7}$Ce$_{0.3}$MnO$_3$ with mixed Mn$^{3+}$/Mn$^{2+}$ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn$^{3+}$ and Mn$^{4+}$, and only a small amount of Mn$^{2+}$ ions can be observed by XAS. Mn$^{2+}$ and Ce$^{4+}$ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.
