The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very sl
ow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electronic energy loss is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via electronic energy loss the potential energy threshold for hillock production can be substantially lowered. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, as demonstrated when plotting the results in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to case where kinetic and potential energies are deposited into the surface.
The high energy density of electronic excitations due to the impact of swift heavy ions can induce structural modifications in materials. We present a X-ray diffractometer called ALIX, which has been set up at the low-energy IRRSUD beamline of the GA
NIL facility, to allow the study of structural modification kinetics as a function of the ion fluence. The X-ray setup has been modified and optimized to enable irradiation by swift heavy ions simultaneously to X-ray pattern recording. We present the capability of ALIX to perform simultaneous irradiation - diffraction by using energy discrimination between X-rays from diffraction and from ion-target interaction. To illustrate its potential, results of sequential or simultaneous irradiation - diffraction are presented in this article to show radiation effects on the structural properties of ceramics. Phase transition kinetics have been studied during xenon ion irradiation of polycrystalline MgO and SrTiO3. We have observed that MgO oxide is radiation-resistant to high electronic excitations, contrary to the high sensitivity of SrTiO3, which exhibits transition from the crystalline to the amorphous state during irradiation. By interpreting the amorphization kinetics of SrTiO3, defect overlapping models are discussed as well as latent track characteristics. Together with a transmission electron microscopy study, we conclude that a single impact model describes the phase transition mechanism.
The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film possesses doma
ins that exhibit a metal-to-insulator transition with clear first order features or remain metallic down to low temperatures. A simple model consisting of two parallel resistors can be used to quantify a phase coexistence scenario explaining the measured macroscopic transport properties. The interaction between film and substrate is the most plausible candidate to explain this extended phase coexistence as shown by a correlation between the transport properties and the structural data.
Epitaxial La2NiMnO6 thin films have been grown on (001)-oriented SrTiO3 using the PLD technique. The thin films are semiconducting and FM with a TC close to 270K, a coercive field of 920Oe, and a saturation magnetization of 5muB per f.u. TEM, conduct
ed at RT, reveals a majority phase having I-centered structure with a=c=1.4asub and b=2asub along with a minority phase-domains having P-type structure (asub being the lattice parameter of the perovskite structure). A discusion on the presence of Ni/Mn long-range ordering, in light of recent literature on double perovskites La2NiMnO6 is presented.
