Circuit quantum electrodynamics systems are typically built from resonators and two-level artificial atoms, but the use of multi-level artificial atoms instead can enable promising applications in quantum technology. Here we present an implementation
of a Josephson junction circuit dedicated to operate as a V-shape artificial atom. Based on a concept of two internal degrees of freedom, the device consists of two transmon qubits coupled by an inductance. The Josephson nonlinearity introduces a strong diagonal coupling between the two degrees of freedom that finds applications in quantum non-demolition readout schemes, and in the realization of microwave cross-Kerr media based on superconducting circuits.
We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibri
um, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.
We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain
bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account.
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates
, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.
We present time-resolved charge sensing measurements on a GaAs double quantum dot with two proximal quantum point contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enables us to measure dot charging and d
ischarging rates for significantly smaller signal-to-noise ratios than required for charge detection with a single QPC. This allows to reduce the current level in the detector and therefore the invasiveness of the detection process and may help to increase the available measurement bandwidth in noise-limited setups.
We investigate experimentally the influence of current flow through two independent quantum point contacts to a nearby double quantum dot realized in a GaAs-AlGaAs heterostructure. The observed current through the double quantum dot can be explained
in terms of coupling to a bosonic bath. The temperature of the bath depends on the power generated by the current flow through the quantum point contact. We identify the dominant absorption and emission mechanisms in a double quantum dot as an interaction with acoustic phonons. The experiment excludes coupling of a double quantum dot to shot noise generated by quantum point contact as the dominant mechanism.
