ترغب بنشر مسار تعليمي؟ اضغط هنا

Quantum dot occupation and electron dwell time in the cotunneling regime

232   0   0.0 ( 0 )
 نشر من قبل Bruno K\\\"ung
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.

قيم البحث

اقرأ أيضاً

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whethe r they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.
We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb blockade regime. We find that the zero-bias conductance, $g_0(T)$, in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of tunnel junctions participating in cotunneling events, is shown to be directly related to the power law exponent in the measured current-voltage characteristics. We discuss the implications of these findings in light of models on cotunneling and hopping transport in mesoscopic, granular conductors.
We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.
Using the real-time diagrammatic technique and taking into account both the sequential and cotunneling processes, we analyze the transport properties of single-wall metallic carbon nanotubes coupled to nonmagnetic and ferromagnetic leads in the full range of parameters. In particular, considering the two different shell filling schemes of the nanotubes, we discuss the behavior of the differential conductance, tunnel magnetoresistance and the shot noise. We show that in the Coulomb diamonds corresponding to even occupations, the shot noise becomes super-Poissonian due to bunching of fast tunneling processes resulting from the dynamical channel blockade, whereas in the other diamonds the noise is roughly Poissonian, in agreement with recent experiments. The tunnel magnetoresistance is very sensitive to the number of electrons in the nanotube and exhibits a distinctively different behavior depending on the shell filling sequence of the nanotube.
361 - Timo Kaldewey 2017
Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-sho rt laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا