We report on experimental investigation of thermal contact resistance of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness. It is found that the thermal contact resistance depends on t
he graphene loading non-monotonically, achieving its minimum at the loading fraction of ~15 wt.%. Increasing the surface roughness by ~1 micrometer results in approximately the factor of x2 increase in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, thermal contact resistance, and the total thermal resistance of the thermal interface material layer on the graphene loading and surface roughness indicate the need for optimization of the loading fraction for specific materials and roughness of the connecting surfaces. Our results are important for developing graphene technologies for thermal management of high-power-density electronics.
Recent years witnessed much broader use of Brillouin inelastic light scattering spectroscopy for the investigation of phonons and magnons in novel materials, nanostructures, and devices. Driven by developments in instrumentation and the strong need f
or accurate knowledge of energies of elemental excitations, the Brillouin - Mandelstam spectroscopy is rapidly becoming an essential technique, complementary to the Raman inelastic light scattering spectroscopy. We provide an overview of recent progress in the Brillouin light scattering technique, focusing on the use of this photonic method for the investigation of confined acoustic phonons, phononic metamaterials, magnon propagation and scattering. The Review emphasizes emerging applications of the Brillouin - Mandelstam spectroscopy for phonon engineered structures and spintronic devices and concludes with a perspective for future directions.
We investigated the thermal conductivity K of graphene ribbons and graphite slabs as the function of their lateral dimensions. Our theoretical model considered the anharmonic three-phonon processes to the second-order and included the angle-dependent
phonon scattering from the ribbon edges. It was found that the long mean free path of the long-wavelength acoustic phonons in graphene can lead to an unusual non-monotonic dependence of the thermal conductivity on the length L of a ribbon. The effect is pronounced for the ribbons with the smooth edges (specularity parameter p>0.5). Our results also suggest that - contrary to what was previously thought - the bulk-like 3D phonons in graphite can make a rather substantial contribution to its in-plane thermal conductivity. The Umklapp-limited thermal conductivity of graphite slabs scales, for L below ~ 10 micrometers, as log(L) while for larger L, the thermal conductivity approaches a finite value following the dependence K_0 - AtimesL^-1/2, where K_0 and A are parameters independent of the length. Our theoretical results clarify the scaling of the phonon thermal conductivity with the lateral sizes in graphene and graphite. The revealed anomalous dependence K(L) for the micrometer-size graphene ribbons can account for some of the discrepancy in reported experimental data for graphene.
Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator circuits with and without graphene lateral heat spreaders. Numerical solutions of th
e heat propagation equations were obtained using the finite element method. The analysis was focused on the prototype silicon-on-insulator circuits with the metal-oxide-semiconductor field-effect transistors. It was found that the incorporation of graphene or few-layer graphene layers with proper heat sinks can substantially lower the temperature of the localized hot spots. The maximum temperature in the transistor channels was studied as function of graphenes thermal conductivity and the thickness of the few-layer-graphene. The developed model and obtained results are important for the design of graphene heat spreaders and interconnects.
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in appearance
of the strong disorder D band around 1345 1/cm indicating damage to the lattice. The D and G peak evolution with the increasing radiation dose follows the amorphization trajectory, which suggests graphenes transformation to the nanocrystalline, and then to amorphous form. The results have important implications for graphene characterization and device fabrication, which rely on the electron microscopy and focused ion beam processing.
