We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy s
cans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and crystal lattice mismatch defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects
and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.
We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} sim 30$,k$Omega$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of
the observed quasiperiodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of the electrons in the conductive band of the wire.
