Photoelectric phenomena in structures based on high-resistivity semiconductor crystals with a thin insulator layer at the semiconductor-metal boundary

A previously unknown effect-giant spatial redistribution of the electric field strength in a crystal under illumination of the structure - was discovered and investigated in real photoresistors on high-resistivity (semi-insulating) semiconductor CdTecrystals (in metal-thin insulator- semiconductor-thin insulator -metal structures). A new concept is proposed for photoelectric phenomena in high- resistivity semiconductor crystals. The concept is based on the idea that the redistribution of the field under such conditions that the carrier lifetime remains unchanged under illumination plays a determining role in these phenomena. The nature of the effect is described, the dependence of the characteristics of the structures on the parameters of the crystal and the insulator layers is explained by the manifestation of this effect, and ways to produce structures with prescribed photoelectric characteristics for new devices and scientific methods are examined.