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A previously unknown effect-giant spatial redistribution of the electric field strength in a crystal under illumination of the structure - was discovered and investigated in real photoresistors on high-resistivity (semi-insulating) semiconductor CdTe crystals (in metal-thin insulator- semiconductor-thin insulator -metal structures). A new concept is proposed for photoelectric phenomena in high- resistivity semiconductor crystals. The concept is based on the idea that the redistribution of the field under such conditions that the carrier lifetime remains unchanged under illumination plays a determining role in these phenomena. The nature of the effect is described, the dependence of the characteristics of the structures on the parameters of the crystal and the insulator layers is explained by the manifestation of this effect, and ways to produce structures with prescribed photoelectric characteristics for new devices and scientific methods are examined.
Optical control of electronic spins is the basis for ultrafast spintronics: circularly polarized light in combination with spin-orbit coupling of the electronic states allows for spin manipulation in condensed matter. However, the conventional approa
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconduct
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductor
Based on measurements of angle resolved photoemission, we report that in the Pb/Ge(111)- sqrt{3}xsqrt{3} R30^circ structure, in addition to three bands resembling Ge heavy hole (HH), light hole (LH), and split off (SO) bulk band edges, a fourth dispe
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel