Highly-anisotropic in-plane magneto-resistance (MR) in graphite (HOPG) samples has been recently observed (Y. Kopelevich et al., arXiv:1202.5642) which is negative and linear in low fields in some current direction while it is giant, super-linear and
positive in the perpendicular direction. In the framework of the hopping conductance theory via non-zero angular momentum orbitals we link extraordinary MRs in graphite and in organic insulators (OMAR) observed in about the same magnetic fields. The theory predicts quadratic negative MR (NMR) when there is a time-reversal symmetry (TRS), and linear NMR if TRS is broken. We argue that the observed linear NMR could be a unique signature of the broken TRS both in graphite and organic compounds. While some local paramagnetic centers are responsible for the broken TRS in organic insulators, a large diamagnetism of our HOPG samples may involve a more intriguing scenario of TRS breaking.
We have analyzed scanning tunneling spectra of two electron-doped cuprates Pr0.88LaCe0.12CuO4 (Tc = 21 K and 24 K) and compared them with tunneling spectrum of hole-doped La1.84Sr0.16CuO4 and effective electron-boson spectral function of hole-doped L
a1.97Sr0.03CuO4 (extracted from angle-resolved photoemission spectrum). We have also analyzed tunneling spectra and angle-resolved photoemission spectra for hole-doped Bi2Sr2CaCu2O8. These results unambiguously rule out magnetic pairing mechanism in both electron- and hole-doped cuprates and support polaronic/bipolaronic superconductivity in hole-doped Bi2Sr2CaCu2O8.
It has been recently shown that the competition between unscreened Coulomb and Fr{o}hlich electron-phonon interactions can be described in terms of a short-range spin exchange $J_p$ and an effective on-site interaction $tilde{U}$ in the framework of
the polaronic $t$-$J_p$-$tilde{U}$ model. This model, that provides an explanation for high temperature superconductivity in terms of Bose-Einstein condensation (BEC) of small and light bipolarons, is now studied as a charged Bose-Fermi mixture. Within this approximation, we show that a gap between bipolaron and unpaired polaron bands results in a strong suppression of low-temperature spin susceptibility, specific heat and tunneling conductance, signaling the presence of normal state pseudogap without any assumptions on preexisting orders or broken symmetries in the normal state of the model.
We use femtosecond optical spectroscopy to systematically measure the primary energy relaxation rate k1 of photoexcited carriers in cuprate and pnictide superconductors. We find that k1 increases monotonically with increased negative strain in the cr
ystallographic a-axis. Generally, the Bardeen-Shockley deformation potential theorem and, specifically, pressure-induced Raman shifts reported in the literature suggest that increased negative strain enhances electron-phonon coupling, which implies that the observed direct correspondence between a and k1 is consistent with the canonical assignment of k1 to the electron-phonon interaction. The well-known non-monotonic dependence of the superconducting critical temperature Tc on the a-axis strain is also reflected in a systematic dependence Tc on k1, with a distinct maximum at intermediate values (~16 ps-1 at room temperature). The empirical non-monotonic systematic variation of Tc with the strength of the electron-phonon interaction provides us with unique insight into the role of electron-phonon interaction in relation to the mechanism of high-Tc superconductivity as a crossover phenomenon.
In the last years ample experimental evidence has shown that charge carriers in high-temperature superconductors are strongly correlated but also coupled with lattice vibrations (phonons), signaling that the true origin of high-Tc superconductivity c
an only be found in a proper combination of Coulomb and electron-phonon interactions. On this basis, we propose and study a model for high-Tc superconductivity, which accounts for realistic Coulomb repulsion, strong electron-phonon (Frohlich) interaction and residual on-site (Hubbard tilde{U}) correlations without any ad-hoc assumptions on their relative strength and interaction range. In the framework of this model, which exhibits a phase transition to a superconducting state with a critical temperature Tc well in excess of 100K, we emphasize the role of tilde{U} as the driving parameter for a BEC/BCS crossover. Our model lays a microscopic foundation for the polaron-bipolaron theory of superconductivity. We argue that the high-Tc phenomenon originates in competing Coulomb and Frohlich interactions beyond the conventional BCS description.
Present-day angle-resolved photoemission spectroscopy (ARPES) has offered a tremendous advance in the understanding of electron energy spectra in cuprate superconductors and some related compounds. However, in high magnetic field, magnetic quantum os
cillations at low temperatures indicate the existence of small electron (hole) Fermi pockets seemingly missing in ARPES of hole (electron) doped cuprates. Here ARPES and quantum oscillations are reconciled in the framework of an impurity band in the charge-transfer Mott-Hubbard insulator.
Along with some other researches we have realised that the true origin of high-temperature superconductivity should be found in the strong Coulomb repulsion combined with a significant electronphonon interaction. Both interactions are strong (on the
order of 1 eV) compared with the low Fermi energy of doped carries which makes the conventional BCS-Eliashberg theory inapplicable in cuprates and related doped insulators. Based on our recent analytical and numerical results I argue that high-temperature superconductivity from repulsion is impossible for any strength of the Coulomb interaction. Major steps of our alternative polaronic theory are outlined starting from the generic Hamiltonian with the unscreened (bare) Coulomb and electron-phonon interactions accounting for critical temperatures of high-temperature superconductors without any adjustable parameters.
We report analytical and numerical results on the two-particle states of the polaronic t-Jp model derived recently with realistic Coulomb and electron-phonon (Frohlich) interactions in doped polar insulators. Eigenstates and eigenvalues are calculate
d for two different geometries. Our results show that the ground state is a bipolaronic singlet, made up of two polarons. The bipolaron size increases with increasing ratio of the polaron hopping integral t to the exchange interaction Jp but remains small compared to the system size in the whole range 0<t/Jp<1. Furthermore, the model exhibits a phase transition to a superconducting state with a critical temperature well in excess of 100K. In the range t/Jp<1, there are distinct charge and spin gaps opening in the density of states, specific heat, and magnetic susceptibility well above Tc.
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohms Law and Newtons Law of Cooling
, and fitting this model to experimental data. This threshold switching is the soft breakdown observed during electroforming of TiO2 and other transition-metal-oxide based memristors, as well as a precursor to ON or SET switching of unipolar memristors from their high to their low resistance states. The shape of the V(I) curve is a sensitive indicator of the nature of the polaronic conduction.
We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns dep
ending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices.
