Thermoelectric transport in nanoscale conductors is analyzed in terms of the response of the system to a thermo-mechanical field, first introduced by Luttinger, which couples to the electronic energy density. While in this approach the temperature re
mains spatially uniform, we show that a spatially varying thermo-mechanical field effectively simulates a temperature gradient across the system and allows us to calculate the electric and thermal currents that flow due to the thermo-mechanical field. In particular, we show that, in the long-time limit, the currents thus calculated reduce to those that one obtains from the Landauer-Buttiker formula, suitably generalized to allow for different temperatures in the reservoirs, if the thermo-mechanical field is applied to prepare the system, and subsequently turned off at ${t=0}$. Alternatively, we can drive the system out of equilibrium by switching the thermo-mechanical field after the initial preparation. We compare these two scenarios, employing a model noninteracting Hamiltonian, in the linear regime, in which they coincide, and in the nonlinear regime in which they show marked differences. We also show how an operationally defined local effective temperature can be computed within this formalism.
The Wiedemann-Franz law, connecting the electronic thermal conductivity to the electrical conductivity of a disordered metal, is generally found to be well satisfied even when electron-electron (e-e) interactions are strong. In ultra-clean conductors
, however, large deviations from the standard form of the law are expected, due to the fact that e-e interactions affect the two conductivities in radically different ways. Thus, the standard Wiedemann-Franz ratio between the thermal and the electric conductivity is reduced by a factor $1+tau/tau_{rm th}^{rm ee}$, where $1/tau$ is the momentum relaxation rate, and $1/tau_{rm th}^{rm ee}$ is the relaxation time of the thermal current due to e-e collisions. Here we study the density and temperature dependence of $1/tau_{rm th}^{rm ee}$ in the important case of doped, clean single layers of graphene, which exhibit record-high thermal conductivities. We show that at low temperature $1/tau_{rm th}^{rm ee}$ is $8/5$ of the quasiparticle decay rate. We also show that the many-body renormalization of the thermal Drude weight coincides with that of the Fermi velocity.
Coulomb drag between two unhybridized graphene sheets separated by a dielectric spacer has recently attracted considerable theoretical interest. We first review, for the sake of completeness, the main analytical results which have been obtained by ot
her authors. We then illustrate pedagogically the minimal theory of Coulomb drag between two spatially-separated two-dimensional systems of massless Dirac fermions which are both away from the charge-neutrality point. This relies on second-order perturbation theory in the screened interlayer interaction and on Boltzmann transport theory. In this theoretical framework and in the low-temperature limit, we demonstrate that, to leading (i.e. quadratic) order in temperature, the drag transresistivity is completely insensitive to the precise intralayer momentum-relaxation mechanism (i.e. to the functional dependence of the scattering time on energy). We also provide analytical results for the low-temperature drag transresistivity for both cases of thick and thin spacers and for arbitrary values of the dielectric constants of the media surrounding the two Dirac-fermion layers. Finally, we present numerical results for the low-temperature drag transresistivity in the case in which one of the media surrounding the Dirac-fermion layers has a frequency-dependent dielectric constant. We conclude by suggesting an experiment that can potentially allow for the observation of departures from the canonical Fermi-liquid quadratic-in-temperature behavior of the transresistivity.
We calculate the tunneling density-of-states (DOS) of a disorder-free two-dimensional interacting electron system with a massless-Dirac band Hamiltonian. The DOS exhibits two main features: i) linear growth at large energies with a slope that is supp
ressed by quasiparticle velocity enhancement, and ii) a rich structure of plasmaron peaks which appear at negative bias voltages in an n-doped sample and at positive bias voltages in a p-doped sample. We predict that the DOS at the Dirac point is non-zero even in the absence of disorder because of electron-electron interactions, and that it is then accurately proportional to the Fermi energy. The finite background DOS observed at the Dirac point of graphene sheets and topological insulator surfaces can therefore be an interaction effect rather than a disorder effect.
