We generate indistinguishable photons from a semiconductor diode containing a InAs/GaAs quantum dot. Using an all-electrical technique to populate and control a single-photon emitting state we filter-out dephasing by Stark-shifting the emission energ
y on timescales below the dephasing time of the state. Mixing consecutive photons on a beam-splitter we observe two-photon interference with a visibility of 64%.
We have developed a microcavity single-photon source based on a single quantum dot within a planar cavity in which wet-oxidation of a high-aluminium content layer provides lateral confinement of both the photonic mode and the injection current. Later
al confinement of the optical mode in optically pumped structures produces a strong enhancement of the radiative decay rate. Using microcavity structures with doped contact layers, we demonstrate a single-photon emitting diode where current may be injected into a single dot.
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer r
epeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavity and here report observation of a three fold enhancement in the radiative lifetime of a quantum dot exciton state due to the Purcell effect.
