A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca$_2$MnO$_4$ Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr$_2$TiO$_
4$ substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship ($OR$) for each substrate-film grain pair. Two preferred epitaxial $ORs$ accounted for more than 90 % of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell $OR$ ([100][001]$_{film}$ $parallel$ [100][001]$_{substrate}$, or $OR1$) accounted for approximately 30 % of each film. The $OR$ that accounted for 60 % of each film ([100][001]$_{film}$ $parallel$ [100][010]$_{substrate}$, or $OR2$) corresponds to a rotation from $OR1$ by 90$^{circ}$ about the a-axis. $OR2$ is strongly favored for substrate orientations in the center of the stereographic triangle, and $OR1$ is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While $OR1$ should be lower in energy, the majority observation of $OR2$ implies kinetic hindrances decrease the frequency of $OR1$. Persistent grain over grain growth and the absence of variations of the $OR$ frequencies with thickness implies that the growth competition is finished within the first few si{ anometer}, and local epitaxy persists thereafter during growth.
The local epitaxial growth of pulsed laser deposited Ca$_2$MnO$_4$ films on polycrystalline spark plasma sintered Sr$_2$TiO$_4$ substrates was investigated to determine phase formation and preferred epitaxial orientation relationships ($ORs$) for iso
structural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction (EBSD) patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 $^{circ}$C and 800 $^{circ}$C) was found to be 750 $^{circ}$C using the maximum value of the average image quality (IQ) of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca$_2$MnO$_4$ grain had a single $OR$ with the Sr$_2$TiO$_4$ grain on which it grew. Three primary $ORs$ described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first $OR$, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell $OR$, expressed as [100][001]$_{film}$||[100][001]$_{sub}$. The other two $ORs$ were essentially rotated from the first by 90$^{circ}$, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90$^{circ}$). These results indicate that only a small number of $ORs$ are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.
This document presents an interim framework in which the coupling structure of a Higgs-like particle can be studied. After discussing different options and approximations, recommendations on specific benchmark parametrizations to be used to fit the data are given.
The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on (100)-SrTiO3 (STO) substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SV
O) layers are good single crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3 while SVO layers suffers from a tetragonal distortion due to the substrate induced stain. Electron Energy Loss Spectroscopy (EELS) investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and SrVO3 layers.
