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Register a new user33% Giant Anomalous Hall Current Driven by both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co3Sn2S2
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Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic anomalous Hall conductivity (AHC) and a giant anomalous Hall angle (AHA). The predicted energy dependence of the AHC in this material exhibits a plateau at 1000 {Omega}-1 cm-1 and an energy width of 100 meV just below EF, thereby implying that the large intrinsic AHC will not significantly change against small-scale energy disturbances such as slight p-doping. Here, we successfully trigger the extrinsic contribution from alien-atom scattering in addition to the intrinsic one of the pristine material by introducing a small amount of Fe dopant to substitute Co in Co3Sn2S2. Our experimental results show that the AHC and AHA can be prominently enhanced up to 1850 {Omega}-1 cm-1 and 33%, respectively, owing to the synergistic contributions from the intrinsic and extrinsic mechanisms as distinguished by the TYJ model. In particular, the tuned AHA holds a record value in low fields among known magnetic materials. This study opens up a pathway to engineer giant AHE in magnetic Weyl semimetals, thereby potentially advancing the topological spintronics/Weyltronics.
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Topological materials have recently attracted considerable attention among materials scientists as their properties are predicted to be protected against perturbations such as lattice distortion and chemical substitution. However, any experimental proof of such robustness is still lacking. In this study, we experimentally demonstrate that the topological properties of the ferromagnetic kagome compound Co3Sn2S2 are preserved upon Ni substitution. We systematically vary the Ni content in Co3Sn2S2 single crystals and study their magnetic and anomalous transport properties. For the intermediate Ni substitution, we observe a remarkable increase in the coercive field while still maintaining significant anomalous Hall conductivity. The large anomalous Hall conductivity of these compounds is intrinsic, consistent with first-principle calculations, which proves its topological origin. Our results can guide further studies on the chemical tuning of topological materials for better understanding.
Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSM) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHE in a new family of FM WSMs, PrAlGe$_{1-x}$Si$_x$, where $x$ can be tuned continuously. From DFT calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient ($R_S$) but significant changes in the ordinary Hall coefficient ($R_0$) in PrAlGe$_{1-x}$Si$_x$ as a function of $x$, confirming a change of Fermi surface. By comparing the magnitude of $R_0$ and $R_S$, we identify two regimes; $|R_0|<|R_S|$ when $xle0.5$ and $|R_0|>|R_S|$ when $x>0.5$. Through a detailed scaling analysis, we discover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when $xle0.5$. Such universal AHC is absent when $x>0.5$. Thus, we point out the significance of the extrinsic mechanisms in FM WSMs and report the first observation of a transition from intrinsic to extrinsic AHE in PrAlGe$_{1-x}$Si$_x$.
The modulation of the electronic structure by an external magnetic field, which could further control the electronic transport behaviour of a system, is highly desired. Herein, an unconventional anomalous Hall effect (UAHE) was observed during magnetization process in the magnetic Weyl semimetal EuB6, resulting in an unconventional anomalous Hall-conductivity as high as ~1000 {Omega}-1 cm-1 and a Hall-angle up to ~10%. The system even only shows the UAHE, meaning that the anomalous Hall signal completely comes from the UAHE, with UAHE accounting for 100% and 87.5% of the AHE and the total Hall response, respectively. Theoretical calculations revealed that a largely enhanced Berry curvature was induced by the dynamic folding of the topological bands due to the spin-canting effect under external magnetic fields, which further produced the prominent UAHE even in a low-field magnetization process. These findings elucidate the connection between the non-collinear magnetism and the topological electronic state as well as reveal a novel manner to manipulate the transport behaviour of topological electrons.
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible means is less explored. Here, an unusual elevation of anomalous Hall effect (AHE) is obtained in electron(Ni)-doped magnetic Weyl semimetal Co3-xNixSn2S2, showing peak values of anomalous Hall-conductivity, Hall-angle and Hall-factor at a relatively low doping level of x = 0.11. The separation of intrinsic and extrinsic contributions to total AHE using TYJ scaling model indicates that such significant enhancement is dominated by the intrinsic mechanism of electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, i.e., local disorder, imposes a striking effect on broadening the bands and narrowing the inverted gap, and thus results in an elevation of the integrated Berry curvature. Our results not only realize the enhancement of AHE in a magnetic Weyl semimetal, but also provide a practical design principle to modulate the bands and transport properties in topological materials, by exploiting the disorder effect of doping.
The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspect in condensed matter physics and has been controversial for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions on Berry curvature around Weyl nodes, which would lead to a large intrinsic AHE. Here, we report the large intrinsic AHE in the half-metallic ferromagnet Co3Sn2S2 single crystal. By systematically mapping out the electronic structure of Co3Sn2S2 theoretically and experimentally, the large intrinsic AHE should originate from the Weyl fermions near the Fermi energy. Furthermore, the intrinsic anomalous Hall conductivity depends linearly on the magnetization and this can be attributed to the sharp decrease of magnetization and the change of topological characteristics.
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