Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCritical Field of Al-Doped MgB2 Samples: Correlation with the Suppression of Sigma-Band Gap
168
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
In this Letter, the study of the effect of Al substitution on the upper critical field, Bc2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between Bc2 and the sigma-band gap, Delta_sigma, evaluated by point-contact measurements. Up to x=0.2 Bc2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta_sigma. For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of Delta_sigma rather than by the increase of the sigma-band scattering rate
rate research
Read More
Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jcs) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying.
The high field magnetization and magneto transport measurements are carried out to determine the critical superconducting parameters of MgB2-xCx system. The synthesized samples are pure phase and the lattice parameters evaluation is carried out using the Rietveld refinement. The R-T(H) measurements are done up to a field of 140 kOe. The upper critical field values, Hc2 are obtained from this data based upon the criterion of 90% of normal resistivity i.e. Hc2=H at which Rho=90%Rho; where RhoN is the normal resistivity i.e., resistivity at about 40 K in our case. The Werthamer-Helfand-Hohenberg (WHH) prediction of Hc(0) underestimates the critical field value even below than the field up to which measurement is carried out. After this the model, the Ginzburg Landau theory (GL equation) is applied to the R-T(H) data which not only calculates the Hc2(0) value but also determines the dependence of Hc2 on temperature in the low temperature high field region. The estimated Hc(0)=157.2 kOe for pure MgB2 is profoundly enhanced to 297.5 kOe for the x=0.15 sample in MgB2-xCx series. Magnetization measurements are done up to 120 kOe at different temperatures and the other parameters like irreversibility field, Hirr and critical current density Jc(H) are also calculated. The nano carbon doping results in substantial enhancement of critical parameters like Hc2, Hirr and Jc(H) in comparison to the pure MgB2 sample.
We use tunable laser based Angle Resolved Photoemission Spectroscopy to study the electronic structure of the multi-band superconductor, MgB2. These results form the base line for detailed studies of superconductivity in multi-band systems. We find that the magnitude of the superconducting gap on both sigma bands follows a BCS-like variation with temperature with Delta0 ~7 meV. The value of the gap is isotropic within experimental uncertainty and in agreement with pure a s-wave pairing symmetry. We also observe in-gap states confined to kF of the sigma band that occur at some locations of the sample surface. The energy of this excitation, ~3 meV, is inconsistent with scattering from the pi band.
(Abridged abstract) Alloyed MgB2 differs from pure forms in that diffusion is needed to distribute the alloying elements homogeneously. Williamson-Hall analyses of x-ray diffraction peaks showed that Mg1-xAlxB2 samples made by a typical reaction A had higher crystalline strain than when thoroughly annealed by reaction B. The strain and other analyses indicate that reaction A produced substantial Al gradients across the individual grains while reaction B did not. The gredients skew the apparent superconducting behavior: properties appeared to be distinct when plotted vs. x (e.g. two Tc(x) curves), but all of the data merged when analyzed in terms of the unit cell volume v (e.g. one Tc(v) curve). Since v is derived from x-ray diffraction, it captures the average Al content actually present inside the grains and better reflects the behavior intrinsic to the addition of Al. These analyses show that it is important to coordinate structural and property characterizations to remove artifacts of composition gradients and uncover the intrinsic trends. Because the standard characterizations of the superconducting properties above gave no clear indication that the two sample sets had different homogeneity, the structural information was vital to make a correct assessment of the effects of Al doping on superconductivity.
Polycrystalline MgB2-nDx (x= 0 to 0.1) samples are synthesized by solid-state route with ingredients of Mg, B and n-Diamond. The results from magneto-transport and magnetization of nano-diamond doped MgB2-nDx are reported. Superconducting transition temperature (Tc) is not affected significantly by x up to x = 0.05 and latter decreases slightly for higher x > 0.05. R(T) vs H measurements show higher Tc values under same applied magnetic fields for the nano-diamond added samples, resulting in higher estimated Hc2 values. From the magnetization measurements it was found that irreversibility field value Hirr for the pristine sample is 7.5 Tesla at 4 K and the same is increased to 13.5 Tesla for 3-wt% nD added sample at the same temperature. The Jc(H) plots at all temperatures show that Jc value is lowest at all applied fields for pristine MgB2 and the sample doped with 3-wt% nD gives the best Jc values at all fields. For the pure sample the value of Jc is of the order of 105 A/cm2 at lower fields but it decreases very fast as the magnetic field is applied and becomes negligible above 7 Tesla. The Jc is 40 times higher than pure MgB2 at 10 K at 6 Tesla field in case of 3%nD doped sample and its value is still of the order of 103 A/cm2 at 10 Tesla for the same sample. On the other hand at 20K the 5%nD sample shows the best performance at higher fields. These results are discussed in terms of extrinsic pinning due to dispersed n-Diamond in the host MgB2 matrix along with the intrinsic pinning due to possible substitution of C at Boron site and increased inter-band scattering for highly doped samples resulting in extraordinary performance of the doped system.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
