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Register a new userHigh Field Performance of Nano-Diamond Doped MgB2 Superconductor
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Polycrystalline MgB2-nDx (x= 0 to 0.1) samples are synthesized by solid-state route with ingredients of Mg, B and n-Diamond. The results from magneto-transport and magnetization of nano-diamond doped MgB2-nDx are reported. Superconducting transition temperature (Tc) is not affected significantly by x up to x = 0.05 and latter decreases slightly for higher x > 0.05. R(T) vs H measurements show higher Tc values under same applied magnetic fields for the nano-diamond added samples, resulting in higher estimated Hc2 values. From the magnetization measurements it was found that irreversibility field value Hirr for the pristine sample is 7.5 Tesla at 4 K and the same is increased to 13.5 Tesla for 3-wt% nD added sample at the same temperature. The Jc(H) plots at all temperatures show that Jc value is lowest at all applied fields for pristine MgB2 and the sample doped with 3-wt% nD gives the best Jc values at all fields. For the pure sample the value of Jc is of the order of 105 A/cm2 at lower fields but it decreases very fast as the magnetic field is applied and becomes negligible above 7 Tesla. The Jc is 40 times higher than pure MgB2 at 10 K at 6 Tesla field in case of 3%nD doped sample and its value is still of the order of 103 A/cm2 at 10 Tesla for the same sample. On the other hand at 20K the 5%nD sample shows the best performance at higher fields. These results are discussed in terms of extrinsic pinning due to dispersed n-Diamond in the host MgB2 matrix along with the intrinsic pinning due to possible substitution of C at Boron site and increased inter-band scattering for highly doped samples resulting in extraordinary performance of the doped system.
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The high field magnetization and magneto transport measurements are carried out to determine the critical superconducting parameters of MgB2-xCx system. The synthesized samples are pure phase and the lattice parameters evaluation is carried out using the Rietveld refinement. The R-T(H) measurements are done up to a field of 140 kOe. The upper critical field values, Hc2 are obtained from this data based upon the criterion of 90% of normal resistivity i.e. Hc2=H at which Rho=90%Rho; where RhoN is the normal resistivity i.e., resistivity at about 40 K in our case. The Werthamer-Helfand-Hohenberg (WHH) prediction of Hc(0) underestimates the critical field value even below than the field up to which measurement is carried out. After this the model, the Ginzburg Landau theory (GL equation) is applied to the R-T(H) data which not only calculates the Hc2(0) value but also determines the dependence of Hc2 on temperature in the low temperature high field region. The estimated Hc(0)=157.2 kOe for pure MgB2 is profoundly enhanced to 297.5 kOe for the x=0.15 sample in MgB2-xCx series. Magnetization measurements are done up to 120 kOe at different temperatures and the other parameters like irreversibility field, Hirr and critical current density Jc(H) are also calculated. The nano carbon doping results in substantial enhancement of critical parameters like Hc2, Hirr and Jc(H) in comparison to the pure MgB2 sample.
We report the synthesis and variation of superconductivity parameters such as transition temperature Tc, upper critical field Hc, critical current density Jc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCx system with nano-Carbon doping up to x=0.20. Carbon substitutes successfully on boron site and results in significant enhancement of Hirr and Jc(H). Resistivity measurements reveal a continuous decrease in Tc under zero applied field, while the same improves remarkably at higher fields with an increase in nano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is 7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which is enhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures. Compared to undoped sample, critical current density (Jc) for the x=0.08 nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Tesla field.
We report the effect of adipic acid (C6H10O4) doping on lattice parameters, microstructure, critical temperature (Tc), current density (Jc), and irreversibility field (Hirr) for MgB2 superconductor. Actual carbon (C) substitution level for boron (B) is estimated to be from 0.40 percent to 2.95 percent for different doping levels. A reduction in Tc from 38.43 to 34.93 K and in lattice parameter a from 3.084(3) A to 3.075(6) Ais observed for the10 wt percent C6H10O4 doped sample in comparison to pristine MgB2. This is an indication of C substitution at boron sites, with the C coming from the decomposition of C6H10O4 at the time of reaction. Interestingly the doped samples have resulted in significant enhancement of Jc and Hirr. All the doped samples exhibit the Jc value of the order of 10^4 A/cm2 at 5 K and 8 T, which is higher by an order of magnitude as compared to undoped sample. This result indicates that C6H10O4 is a promising material for MgB2 for obtaining the excellent Jc values under higher magnetic fields.
The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample . In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.
We have performed microwave measurements on superconducting hot-isostatically- pressed (HIPed) bulk MgB2 using a parallel-plate resonator technique. The high density and strength of the HIPed material allowed preparation of samples with mirror-like surfaces for microwave measurements. The microwave surface resistance decreased by about 40% at 20 K when the root-mean-square surface roughness was reduced from 220 nm to 110 nm through surface-polishing and ion-milling. The surface resistance was independent of surface microwave magnetic field at least up to 4 Oe and below 30 K. We attribute this behavior, and the overall low surface resistance (~0.8 mOhms at 10 GHz and 20 K), to the high density of our samples and the absence of weak links between grains.
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