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Register a new userPersistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7
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Added by
Carmine Autieri Dr.
Publication date
2019
fields
Physics
and research's language is
English
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Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as channels in spin field effect transistors, the experimental research has been limited so far to semiconducting GeTe, in which ferroelectric switching is often prevented by heavy doping and/or large leakage currents. Here, we report that CsBiNb2O7, a layered perovskite of Dion-Jacobson type, is a robust ferroelectric with sufficiently strong spin-orbit coupling and spin texture reversible by electric field. Moreover, we reveal that its topmost valence bands spin texture is quasi-independent from the momentum, as a result of the low symmetry of its ferroelectric phase. The peculiar spin polarization pattern in the momentum space may yield the so-called persistent spin helix, a specific spin-wave mode which protects the spin from decoherence in diffusive transport regime, potentially ensuring a very long spin lifetime in this material.
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Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are typically not suitable FERSC candidates. By rationalizing how this limitation can be by-passed through band engineering of the electronic structure in layered perovskites, we identify the Bi$_2$WO$_6$ Aurivillius crystal as the first robust ferroelectric with large and reversible Rashba spin-splitting, that can even be substantially doped without losing its ferroelectric properties. Importantly, we highlight that a unidirectional spin-orbit field arises in layered Bi$_2$WO$_6$, resulting in a protection against spin-decoherence.We highlight moreover that a unidirectional spin-orbit field arises in Bi$_2$WO$_6$, in which the spin-texture is so protected against spin-decoherence.
We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In order to address the temperature dependence of the relevant spin relaxation mechanisms we derive and solve semiclassical spin diffusion equations taking into account spin-dependent impurity scattering, cubic Dresselhaus spin-orbit interactions and the effect of electron-electron interactions. For the experimentally relevant regime we find that the lifetime of the persistent spin helix is mainly determined by the interplay of cubic Dresselhaus spin-orbit interaction and electron-electron interactions. We propose that even longer lifetimes can be achieved by generating a spatially damped spin profile instead of the persistent spin helix state.
Despite the imperative importance in solar-cell efficiency, the intriguing phenomena at the interface between perovskite solar-cell and adjacent carrier transfer layers are hardly uncovered. Here we show that PbI$_2$/AI-terminated lead-iodide-perovskite (APbI$_3$; A=Cs$^+$/ methylammonium(MA)) interfaced with the charge transport medium of graphene or TiO2 exhibits the sizable/robust Rashba-Dresselhaus (RD) effect using density-functional-theory and ab initio molecular dynamics (AIMD) simulations above cubic-phase temperature. At the PbI$_2$-terminated graphene/CsPbI3(001) interface, ferroelectric distortion towards graphene facilitates an inversion breaking field. At the MAI-terminated TiO$_2$/MAPbI$_3$(001) interface, the enrooted alignment of MA$^+$ towards TiO$_2$ by short-strong hydrogen-bonding and the concomitant PbI$_3$ distortion preserve the RD interactions even above 330 K. The robust RD effect at the interface even at high temperatures, unlike in bulk, changes the direct-type band to the indirect to suppress recombination of electron and hole, thereby letting these accumulated carriers overcome the potential barrier between perovskite and charge transfer materials, which promotes the solar-cell efficiency.
We investigated the effect of the tensile strain on the spin splitting at the n-type interface in LaAlO$_3$/SrTiO$_3$ in terms of the spin-orbit coupling coefficient $alpha$ and spin texture in the momentum space using first-principles calculations. We found that the $alpha$ could be controlled by the tensile strain and be enhanced up to 5 times for the tensile strain of 7%, and the effect of the tensile strain leads to a persistent spin helix, which has a long spin lifetime. These results support that the strain effect on LaAlO$_3$/SrTiO$_3$ is important for various applications such as spinFET and spin-to-charge conversion.
We demonstrate a spin pump to generate pure spin current of tunable intensity and polarization in the absence of charge current. The pumping functionality is achieved by means of an ac gate voltage that modulates the Rashba constant dynamically in a local region of a quantum channel with both static Rashba and Dresselhaus spin-orbit interactions. Spin-resolved Floquet scattering matrix is calculated to analyze the whole scattering process. Pumped spin current can be divided into spin-preserved transmission and spin-flip reflection parts. These two terms have opposite polarization of spin current and are competing with each other. Our proposed spin-based device can be utilized for non-magnetic control of spin flow by tuning the ac gate voltage and the driving frequency.
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