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Register a new userQuantitative relevance of substitutional impurities to carrier dynamics in diamond
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We have quantified substitutional impurity concentrations in synthetic diamond crystals down to sub parts-per-billion levels. The capture lifetimes of electrons and excitons injected by photoexcitation were compared for several samples with different impurity concentrations. Based on the assessed impurity concentrations, we have determined the capture cross section of electrons to boron impurity, sA=1.3x10^-14 cm2, and that of excitons to nitrogen impurity, sD^ex=3.1x10^-14 cm2. The general tendency of the mobility values for different carrier species is successfully reproduced by including carrier scattering by impurities and by excitons.
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The electronic and magnetic properties of a neutral substitutional nickel (Ni$_s^0$) impurity in diamond are studied using density functional theory in the generalized gradient approximation. The spin-one ground state consists of two electrons with parallel spins, one located on the nickel ion in the $3d^9$ configuration and the other distributed among the nearest-neighbor carbons. The exchange interaction between these spins is due to $p-d$ hybridization and is controllable with compressive hydrostatic or uniaxial strain, and for sufficient strain the antiparallel spin configuration becomes the ground state. Hence, the Ni impurity forms a controllable two-electron exchange-coupled system that should be a robust qubit for solid-state quantum information processing.
We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DFT) is used to study the energetics, structure and properties of the experimentally observed structure. The formation energies of all possible charge states of the different silicon substitutions (Si$_mathrm{B}$, Si$_mathrm{N}$ and Si$_mathrm{{BN}}$) are calculated. The results reveal Si$_mathrm{B}^{+1}$ as the most stable substitutional configuration. In this case, silicon atom elevates by 0.66{AA} out of the lattice with unoccupied defect levels in the electronic band gap above the Fermi level. The formation energy shows a slightly exothermic process. Our results unequivocally show that heteroatoms can be incorporated into the h-BN lattice opening way for applications ranging from single-atom catalysis to atomically precise magnetic structures.
It is suggested that the substitutional nitrogen in diamonds bonded to three of the surrounding carbon atoms instead of four. This proposed electron configuration of the defect is deduced from previous experiments and theoretical considerations. Notably, the 1344 cm-1 band, characteristics of the substitutional Nitrogen, is independent of the isotopic change of Nitrogen but depend on the isotopic change of Carbon. The well established NV centre should not be stable if Nitrogen is bounded to four of the surrounding Carbon. Additional support comes from the substantially bigger size of the single substitutional nitrogen atom indicating loan pair electron. The proposed configuration of the substitutional Nitrogen was also tested by using a simple force constant model. Replacing force constant of C-N with 2/3 C-C:1/3 C=C reproduces the 1344 cm-1 band.
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been studied with ultrafast pump-probe spectroscopy. Oxygen impurities are intentionally created in exfoliated multilayer MoSe2 with Ar+ plasma irradiation and air exposure. After plasma treatment, the signal of transient absorption first increases and then decreases, which is a signature of defect capturing carriers. With larger density of oxygen defects, the trapping effect becomes more prominent. The trapping defect densities are estimated from the transient absorption signal, and its increasing trend in the longer-irradiated sample agrees with the results from X-ray photoelectron spectroscopy. First principle calculations with density functional theory reveal that oxygen atoms occupying Mo vacancies create mid-gap defect states, which are responsible for the carrier trapping. Our findings shed light on the important role of oxygen defects as carrier trappers in transition metal dichalcogenides, and facilitates defect engineering in relevant material and device applications.
The electronic and magnetic properties of neutral substitutional transition-metal dopants in dia- mond are calculated within density functional theory using the generalized gradient approximation to the exchange-correlation potential. Ti and Fe are nonmagnetic, whereas the ground state of V, Cr and Mn are magnetic with a spin entirely localized on the magnetic ion. For Co, Ni, and Cu, the ground state is magnetic with the spin distributed over the transition-metal ion and the nearest-neighbor carbon atoms; furthermore a bound state is found in the gap that originates from the hybridization of the 3d-derived level of the dopant and the 2p-derived dangling bonds of the nearest-neighbor carbons. A p{d hybridization model is developed in order to describe the origin of the magnetic interaction. This model predicts high-spin to low-spin transitions for Ni and Cu under compressive strain.
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