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Register a new userCarrier Trapping by Oxygen Impurities in Molybdenum Diselenide
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Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been studied with ultrafast pump-probe spectroscopy. Oxygen impurities are intentionally created in exfoliated multilayer MoSe2 with Ar+ plasma irradiation and air exposure. After plasma treatment, the signal of transient absorption first increases and then decreases, which is a signature of defect capturing carriers. With larger density of oxygen defects, the trapping effect becomes more prominent. The trapping defect densities are estimated from the transient absorption signal, and its increasing trend in the longer-irradiated sample agrees with the results from X-ray photoelectron spectroscopy. First principle calculations with density functional theory reveal that oxygen atoms occupying Mo vacancies create mid-gap defect states, which are responsible for the carrier trapping. Our findings shed light on the important role of oxygen defects as carrier trappers in transition metal dichalcogenides, and facilitates defect engineering in relevant material and device applications.
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We consider the effects of single impurities on polarons in three-dimensions (3D) using a continuous time quantum Monte-Carlo algorithm. An exact treatment of the phonon degrees of freedom leads to a very efficient algorithm and we are able to compute the polaron dynamics on an infinite lattice using an auxiliary weighting scheme. The magnitude of the impurity potential, the electron-phonon coupling and the phonon frequency are varied. We determine the magnitude of the impurity potential required for polaron trapping. For small electron-phonon coupling the number of phonons increases dramatically on trapping. The polaron binding diagram is computed, showing that intermediate-coupling low-phonon-frequency polarons are localized by exceptionally small impurities.
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Two-dimensional (2D) Van der Waals ferromagnets carry the promise of ultimately miniature spintronics and information storage devices. Among the newly discovered 2D ferromagnets all inherit the magnetic ordering from their bulk ancestors. Here we report a new 2D ferromagnetic semiconductor at room temperature, 2H phase vanadium diselenide (VSe2) which show ferromagnetic at 2D form only. This unique 2D ferromagnetic semiconductor manifests an enhanced magnetic ordering owing to structural anisotropy at 2D limit.
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