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Register a new userPerpendicular magnetic anisotropy in insulating ferrimagnetic gadolinium iron garnet thin films
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We present experimental control of the magnetic anisotropy in a gadolinium iron garnet (GdIG) thin film from in-plane to perpendicular anisotropy by simply changing the sample temperature. The magnetic hysteresis loops obtained by SQUID magnetometry measurements unambiguously reveal a change of the magnetically easy axis from out-of-plane to in-plane depending on the sample temperature. Additionally, we confirm these findings by the use of temperature dependent broadband ferromagnetic resonance spectroscopy (FMR). In order to determine the effective magnetization, we utilize the intrinsic advantage of FMR spectroscopy which allows to determine the magnetic anisotropy independent of the paramagnetic substrate, while magnetometry determines the combined magnetic moment from film and substrate. This enables us to quantitatively evaluate the anisotropy and the smooth transition from in-plane to perpendicular magnetic anisotropy. Furthermore, we derive the temperature dependent $g$-factor and the Gilbert damping of the GdIG thin film.
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Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial period of the stripe domains and fitting established domain models to the period. In combination with SQUID measurements of magnetization and anisotropy energy, this leads to an estimate of the exchange stiffness and domain wall width in these films. These parameters are essential for determining whether domain walls will form in patterned structures and devices made of such materials.
Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the $(000bar{1})$ N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between $x^2-y^2$ and $xy$ orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces.
We show tunable strain-induced perpendicular magnetic anisotropy (PMA) over a wide range of thicknesses in epitaxial ferrimagnetic insulator Eu3Fe5O12 (EuIG) and Tb3Fe5O12 (TbIG) thin films grown by pulsed-laser deposition on Gd3Ga5O12 with (001) and (111) orientations, respectively. The PMA field is determined by measuring the induced anomalous Hall loops in Pt deposited on the garnet films. Due to positive magnetostriction constants, compressive in-plane strain induces a PMA field as large as 32.9 kOe for 4 nm thick EuIG and 66.7 kOe for 5 nm thick TbIG at 300 K, and relaxes extremely slowly as the garnet film thickness increases. In bilayers consisting of Pt and EuIG or Pt and TbIG, robust PMA is revealed by squared anomalous Hall hysteresis loops in Pt, the magnitude of which appears to be only related to the net magnetic moment of iron sublattices. Furthermore, the magnetostriction constant is found to be 2.7x10^(-5) for EuIG and 1.35x10^(-5) for TbIG, comparable with the values for bulk crystals. Our results demonstrate a general approach of tailoring magnetic anisotropy of rare earth iron garnets by utilizing modulated strain via epitaxial growth.
A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert damping. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures.
In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples recently reported [M. Eddrief {it et al.}, Phys. Rev. B {bf 84}, 161410 (2011)]. By means of ferromagnetic resonance studies we measured PMA values up to $sim$ 5$times$10$^5$ J/m$^3$. PMA vanishes when the cubic structure is recovered upon annealing at 300$^{circ}$C. Despite the important values of the magnetoelastic constants measured via the cantilever method, the consequent magnetoelastic contribution to PMA is not enough to explain the observed anisotropy values in the distorted state. {it Ab initio} calculations show that the chemical ordering plays a crucial role in the appearance of PMA. Through a phenomenological model we are able to explain that an excess of next nearest neighbour Ga pairs (B$_2$-like ordering) along the perpendicular direction arises as the source of PMA in Fe$_{1-x}$Ga$_x$ thin films.
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