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Register a new userLarge perpendicular magnetic anisotropy in magnetostrictive Fe$_{1-x}$Ga$_x$ thin films
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In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples recently reported [M. Eddrief {it et al.}, Phys. Rev. B {bf 84}, 161410 (2011)]. By means of ferromagnetic resonance studies we measured PMA values up to $sim$ 5$times$10$^5$ J/m$^3$. PMA vanishes when the cubic structure is recovered upon annealing at 300$^{circ}$C. Despite the important values of the magnetoelastic constants measured via the cantilever method, the consequent magnetoelastic contribution to PMA is not enough to explain the observed anisotropy values in the distorted state. {it Ab initio} calculations show that the chemical ordering plays a crucial role in the appearance of PMA. Through a phenomenological model we are able to explain that an excess of next nearest neighbour Ga pairs (B$_2$-like ordering) along the perpendicular direction arises as the source of PMA in Fe$_{1-x}$Ga$_x$ thin films.
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We report an enhanced magnetoelastic contribution to the Gilbert damping in highly magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin films. This effect is mitigated for perpendicular-to-plane fields, leading to a large anisotropy of the Gilbert damping in all of the films (up to a factor of 10 at room temperature). These claims are supported by broadband measurements of the ferromagnetic resonance linewidths over a range of temperatures (5 to 400 K), which serve to elucidate the effect of both the magnetostriction and phonon relaxation on the magnetoelastic Gilbert damping.
Large perpendicular magnetic anisotropy (PMA) in transition metal thin films provides a pathway for enabling the intriguing physics of nanomagnetism and developing broad spintronics applications. After decades of searches for promising materials, the energy scale of PMA of transition metal thin films, unfortunately, remains only about 1 meV. This limitation has become a major bottleneck in the development of ultradense storage and memory devices. We discovered unprecedented PMA in Fe thin-film growth on the $(000bar{1})$ N-terminated surface of III-V nitrides from first-principles calculations. PMA ranges from 24.1 meV/u.c. in Fe/BN to 53.7 meV/u.c. in Fe/InN. Symmetry-protected degeneracy between $x^2-y^2$ and $xy$ orbitals and its lift by the spin-orbit coupling play a dominant role. As a consequence, PMA in Fe/III-V nitride thin films is dominated by first-order perturbation of the spin-orbit coupling, instead of second-order in conventional transition metal/oxide thin films. This game-changing scenario would also open a new field of magnetism on transition metal/nitride interfaces.
Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wall surface energy was obtained by analyzing the spatial period of the stripe domains and fitting established domain models to the period. In combination with SQUID measurements of magnetization and anisotropy energy, this leads to an estimate of the exchange stiffness and domain wall width in these films. These parameters are essential for determining whether domain walls will form in patterned structures and devices made of such materials.
This work reports on the structural and magnetic properties of Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0 $leqslant$ x $leqslant$ 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films with the thickness of 35 nm were crystallized in tetragonal D0$_{22}$ structure with (001) preferred orientation. Tunable magnetic properties were achieved by changing the Fe content x. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ thins films exhibit high uniaxial anisotropy Ku $geqslant$ 1.4 MJ/m3, coercivity from 0.95 to 0.3 T and saturation magnetization from 290 to 570 kA/m. The film with Mn$_{1.6}$Fe$_{1.1}$Ga$_{1.3}$ composition shows high Ku of 1.47 MJ/m3 and energy product ${(BH)_{max}}$ of 37 kJ/m3, at room temperature. These findings demonstrate that Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films have promising properties for mid-range permanent magnet and spintronic applications.
We investigated perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4(001) heterostructures prepared by electron-beam evaporation. Using an optimized structure, we obtained a large PMA energy ~1 MJ/m3 at room temperature, comparable to that in ultrathin-Fe/MgO(001) heterostructures. Both the PMA energy and saturation magnetization show weak temperature dependence, ensuring wide working temperature in application. The effective magnetic damping constant of the 0.7 nm Fe layer was ~0.02 using time-resolved magneto-optical Kerr effect. This study demonstrates capability of the Fe/MgAl2O4 heterostructure for perpendicular magnetic tunnel junctions, as well as a good agreement with theoretical predictions.
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