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Register a new userDetection and control of spin-orbit interactions in a GaAs hole quantum point contact
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We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.
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Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction.
We have developed a novel technique for detection of spin polarization with a quantum dot weakly coupled to the objective device. The disturbance to the object in this technique is very small since the detection is performed through sampling of single electrons in the object with very slow rate. We have applied the method to a quantum point contact (QPC) under a spin-orbit interaction. A high degree of spin polarization in the vicinity of the QPC was detected when the conductance stayed on a plateau at a half of the unit conductance quantum ($G_{rm q}/2equiv e^2/h$), and also on another plateau at $2e^2/h$. On the half-quantum plateau, the degree of polarization $P$ decreased with the bias source-drain voltage of the QPC while $P$ increased on the single-quantum plateau, manifesting that different mechanisms of polarization were working on these plateaus. Very long spin relaxation times in the detector quantum dot probably due to dynamical nuclear spin polarization were observed. Anomalous decrease of $P$ around zero-bias was observed at a Kondo-like resonance peak.
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions in a sum rule approach. This solution allows to discuss the influence of the spin-orbit coupling on some relevant quantities that have been measured in inelastic light scattering and electron-spin resonance experiments on quantum wells. In particular, we have evaluated the spin-orbit contribution to the spin splitting of the Landau levels and to the splitting of charge- and spin-density excitations. We also discuss how the spin-orbit effects change if the applied magnetic field is tilted with respect to the direction perpendicular to the quantum well.
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin--orbit coefficents. On the other hand they make it possible to turn on and off the effect of SOI with a high on/off-ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin--orbit magnetic field. Spin-lifetimes of 10 s are achieved at a tunnel rate close to 1 kHz.
Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.
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