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Register a new userHole transport in p-type GaAs quantum dots and point contacts
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Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.
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Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.
Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called 0.7 anomaly known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.
We measure tunnelling currents through electrostatically defined quantum dots in a GaAs/AlGaAs heterostructure connected to two leads. For certain tunnelling barrier configurations and high sample bias we find a pronounced resonance associated with a Fermi edge singularity. This many-body scattering effect appears when the electrochemical potential of the quantum dot is aligned with the Fermi level of the lead less coupled to the dot. By changing the relative tunnelling barrier strength we are able to tune the interaction of the localised electron with the Fermi sea.
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.
Linear and non-linear transport properties through an atomic-size point contact based on oxides two-dimensional electron gas is examined using the tight-binding method and the $mathbf{kcdot p}$ approach. The ballistic transport is analyzed in contacts realized at the (001) interface between band insulators $LaAlO_3$ and $SrTiO_3$ by using the Landauer-Buttiker method for many sub-bands derived from three Ti 3d orbitals ($d_{yz}$, $d_{zx}$ and $d_{xy}$) in the presence of an out-of-plane magnetic field. We focus especially on the role played by the atomic spin-orbit coupling and the inversion symmetry breaking term pointing out three transport regimes: the first, at low energies, involving the first $d_{xy}$-like sub-bands, where the conductance quantization is robust; a second one, at intermediate energies, entailing further $d_{xy}$-like sub-bands, where the sub-band splitting induced by the magnetic field is quenched; the third one, where the mixing between light $d_{xy}$-like, heavy $d_{yz}$-like and $d_{zx}$-like sub-bands is so strong that the conductance plateaus turn out to be very narrow. Very good agreement is found with recent experiments exploring the transport properties at low energies.
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