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Register a new userDecoupling and tuning competing effects of different types of defects on flux creep in irradiated YBa$_{2}$Cu$_{3}$O$_{7-{delta}}$ coated conductors
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YBa$_{2}$Cu$_{3}$O$_{7-{delta}}$ coated conductors (CCs) have achieved high critical current densities ($textit{J}_{c}$) that can be further increased through the introduction of additional defects using particle irradiation. However, these gains are accompanied by increases in the flux creep rate, a manifestation of competition between the different types of defects. Here, we study this competition to better understand how to design pinning landscapes that simultaneously increase $textit{J}_{c}$ and reduce creep. CCs grown by metal organic deposition show non-monotonic changes in the temperature-dependent creep rate, $textit{S}(textit{T})$. Notably, in low fields, there is a conspicuous dip to low $textit{S}$ as temperature ($textit{T}$) increases from ~20 K to ~65 K. Oxygen-, proton-, and Au-irradiation substantially increase $textit{S}$ in this temperature range. Focusing on an oxygen-irradiated CC, we investigate the contribution of different types of irradiation-induced defects to the flux creep rate. Specifically, we study $textit{S}(textit{T})$ as we tune the relative density of point defects to larger defects by annealing both an as-grown and an irradiated CC in O$_{2}$ at temperatures $textit{T}_{A}$ = 250${deg}$C to 600${deg}$C. We observe a steady decrease in $textit{S}$($textit{T}$ > 20 K) with increasing $textit{T}_{A}$, unveiling the role of pre-existing nanoparticle precipitates in creating the dip in $textit{S}(textit{T})$ and point defects and clusters in increasing $textit{S}$ at intermediate temperatures.
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We use electromigration (EM) to tune the oxygen content of YBa$_2$Cu$_3$O$_{7-delta}$ nanowires. During EM, the dopant oxygen atoms in the nanowire are displaced under the combined effect of electrostatic force and Joule heating. The EM current can be tuned to either deplete or replenish nanowire with oxygen, allowing fine tuning of its doping level. Transport measurements show that the quality of the nanowires is not influenced by the EM process. Kelvin probe force microscopy (KPFM) is used to image the electric properties of the nanowire at the nanoscale. This technique confirms the good homogeneity of the doping along the nanowires. Thus, EM provides an effective method to reproduce a large portion of the phase diagram on nanoscale.
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