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Register a new userEffect of current hysteresis on the spin polarization of current in a paramagnetic resonant tunneling diode
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A spin-dependent quantum transport is investigated in a paramagnetic resonant tunneling diode (RTD) based on a Zn$_{1-x}$Mn$_x$Se/ZnBeSe heterostructure. Using the Wigner-Poisson method and assuming the two-current model we have calculated the current-voltage characteristics, potential energy profiles and electron density distributions for spin-up and spin-down electron current in an external magnetic field. We have found that -- for both the spin-polarized currents -- two types of the current hysteresis appear on the current-voltage characteristics. The current hysteresis of the first type occurs at the bias voltage below the resonant current peak and results from the accumulation of electrons in the quantum well layer. The current hysteresis of the second type appears at the bias voltage above the resonant current peak and is caused by the creation of the quasi-bound state in the left contact region and the resonant tunneling through this quasi-bound state. The physical interpretation of both the types of the current hysteresis is further supported by the analysis of the calculated self-consistent potential profiles and electron density distributions. Based on these results we have shown that -- in certain bias voltage and magnetic field ranges -- the spin polarization of the current exhibits the plateau behavior with the nearly full spin polarization. This property is very promising for possible applications in spintronics.
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We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is highly spin polarized at zero magnetic field due to the zero field splitting. Detailed modeling demonstrates that the local spin polarization efficiency exceeds 90% without an external magnetic field.
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.
Spin pumping is a widely recognized method to generate the spin current in the spintronics, which is acknowledged as a fundamentally dynamic process equivalent to the spin-transfer torque. In this work, we theoretically verify that the oscillating spin current can be pumped from the microwave-motivated breathing skyrmion. The skyrmion spin pumping can be excited by a relatively low frequency compared with the ferromagnetic resonance (FMR) and the current density is larger than the ordinary FMR spin pumping. Based on the skyrmion spin pumping, we build a high reading-speed racetrack memory model whose reading speed is an order of magnitude higher than the SOT (spin-orbit torque) /STT (spin-transfer torque) skyrmion racetrack. Our work explored the spin pumping phenomenon in the skyrmion, and it may contribute to the applications of the skyrmion-based device.
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $theta$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26pm 0.09 times 10^9 hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the damping $alpha = 0.01$ and non-linear damping $Q = 3.8pm 0.3$ parameters.
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