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Degradation of GaAs Solar Cells Induced By Electron Irradiation

التلف الحاصل للخلايا الشمسية نتيجة تعريضها للتشعيع بالإلكترونات

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 Publication date 2018
and research's language is العربية
 Created by Shamra Editor




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This article deals with the degradation of solar cells induced by electron irradiation. We have exposed GaAs solar cells to different doses of accelerated electrons to create defects, which play an important role as non-radiative recombination centers. We try to achieve the same conditions to which the solar cells are exposed to in outer space. We have studied the variation of the photovoltaic characteristics of these cells versus electron flux. We found out that the open – circuit voltage of GaAs solar cells varies with the electron irradiation dose j, which we varied in the interval: 2x1012 elec.cm-2 < j <5x1015 elec.cm-2 and we found out that: Voc = 1.22 - 0.04 log j V Voc = 2.39 - 0.12 log j V for both, the diffusion and the recombination zones respectively. The density of the short-circuit current has been measured and we found that the current varies with the electron irradiation dose, according to the relation: Jsc = 62.47 - 3.45 log j mA.cm-2 The degradation of solar cells appears from the decrease of the maximum power when () increases.


Artificial intelligence review:
Research summary
يتناول هذا البحث دراسة التلف الحاصل للخلايا الشمسية من نوع GaAs نتيجة تعرضها للتشعيع بالإلكترونات. تم تعريض هذه الخلايا لحزم من الإلكترونات ذات تدفق متغير لخلق عيوب فيها تلعب دوراً أساسياً كمراكز إعادة اتحاد غير مشعة. الهدف من الدراسة هو محاكاة الظروف التي تتعرض لها الخلايا الشمسية في الفضاء الخارجي، ومن ثم دراسة التغيرات التي تطرأ على الخصائص الفولطية الضوئية لهذه الخلايا. أظهرت القياسات أن جهد الدارة المفتوحة وكثافة تيار الدارة المقصورة يتغيران بتابعية جرعة التشعيع الإلكتروني، مما يؤدي إلى تناقص الاستطاعة العظمى للخلية الشمسية. تم إجراء القياسات في مختبر الأوساط غير المنتظمة واللامتجانسة بجامعة بيير وماري كوري في باريس خلال عامي 2001-2002. النتائج أظهرت أن التشعيع الإلكتروني يؤدي إلى تقليل كفاءة الخلايا الشمسية نتيجة لزيادة العيوب التي تعمل كمراكز إعادة اتحاد غير مشعة.
Critical review
دراسة نقدية: يعتبر البحث مهماً في مجال دراسة تأثير التشعيع الإلكتروني على الخلايا الشمسية، إلا أنه يفتقر إلى بعض التفاصيل حول كيفية تحسين مقاومة هذه الخلايا للتشعيع. كان من الممكن أن يتضمن البحث اقتراحات لتحسين تصميم الخلايا الشمسية أو استخدام مواد جديدة تقلل من تأثير التشعيع. كما أن الدراسة تركز بشكل كبير على الجانب التجريبي دون تقديم تحليل نظري كافٍ للنتائج. كان من الأفضل أيضاً تضمين مقارنة مع دراسات سابقة لتوضيح مدى تقدم البحث الحالي.
Questions related to the research
  1. ما هو الهدف الرئيسي من البحث؟

    الهدف الرئيسي من البحث هو دراسة التلف الحاصل للخلايا الشمسية من نوع GaAs نتيجة تعرضها للتشعيع بالإلكترونات ومحاكاة الظروف التي تتعرض لها هذه الخلايا في الفضاء الخارجي.

  2. ما هي النتائج الرئيسية التي توصل إليها البحث؟

    النتائج الرئيسية هي أن جهد الدارة المفتوحة وكثافة تيار الدارة المقصورة يتغيران بتابعية جرعة التشعيع الإلكتروني، مما يؤدي إلى تناقص الاستطاعة العظمى للخلية الشمسية وتقليل كفاءتها.

  3. أين تم إجراء القياسات التجريبية؟

    تم إجراء القياسات في مختبر الأوساط غير المنتظمة واللامتجانسة بجامعة بيير وماري كوري في باريس خلال عامي 2001-2002.

  4. ما هي العيوب التي يسببها التشعيع الإلكتروني في الخلايا الشمسية؟

    التشعيع الإلكتروني يسبب عيوباً تعمل كمراكز إعادة اتحاد غير مشعة، مما يقلل من عمر حوامل الشحنة الأقلية ويؤدي إلى تقليل التيار الكهربائي الناتج عن الخلية الشمسية وبالتالي تقليل كفاءتها.


References used
YAMAGUCHI,M.et al.1997 – Superior radiation –resistant properties of InGaP/GaAs tandem solar cells. Appℓ. Phys. Lett. Vol.70,No.12 pp1566-1568
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544  - 0  - -  Adam Mousa was published in field ( Physics)
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