No Arabic abstract
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.
A Watt-level continuous and single frequency blue laser at 461 nm is obtained by frequency-doubling an amplified diode laser operating at 922 nm via a LBO crystal in a resonant Fabry-P{e}rot cavity. We achieved a best optical conversion efficiency equal to 87% with more than 1 W output power in the blue, and limited by the available input power. The frequency-converted beam is characterized in terms of long term power stability, residual intensity noise, and geometrical shape. The blue beam has a linewidth of the order of 1 MHz, and we used it to magneto-optically trap $^{88}$Sr atoms on the 5s$^{2},^{1}$S$_0$ -- 5s5p$,^{1}$P$_1$ transition. The low-finesse, linear-cavity doubling system is very robust, maintains the lock for several days, and is compatible with a tenfold increase of the power levels which could be obtained with fully-fibered amplifiers and large mode area fibers.
The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermal-lensing effect on the spatiotemporal behavior of the optical field is demonstrated. We reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial holeburning.
We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers with saturable absorber. In particular, we observe a superlinear growth of the peak power of SF pulses with increasing amplitude of injected current pulses and attribute it to cooperative pairing of electron-hole (e-h) radiative recombinations. The phase transitions from amplified spontaneous emission to superfluorescence and then to lasing regime is confirmed by observing (i) abrupt peak power growth accompanied by spectral broadening, (ii) spectral shape with hyperbolic secant envelope and (iii) red shift of central wavelength of SF emission pulse. The observed red shift of SF emission is shown to be caused by the pairing of e-h pairs in an indirect cooperative X-transition.
We present a laser frequency comb based upon a 250 MHz mode-locked erbium-doped fiber laser that spans more than 300 terahertz of bandwidth, from 660 nm to 2000 nm. The system generates 1.2 nJ, 70 fs pulses at 1050 nm by amplifying the 1580 nm laser light in Er:fiber, followed by nonlinear broadening to 1050 nm and amplification in Yb:fiber. Extension of the frequency comb into the visible is achieved by supercontinuum generation from the 1050 nm light. Comb coherence is verified with cascaded f-2f interferometry and comparison to a frequency stabilized laser.
We have developed a Watt-level single-frequency tunable fiber laser in the 915-937 nm spectral window. The laser is based on a neodymium-doped fiber master oscillator power amplifier architecture, with two amplification stages using a 20 mW extended cavity diode laser as seed. The system output power is higher than 2 W from 921 to 933 nm, with a stability better than 1.4 percent and a low relative intensity noise.