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Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order $5times10^{-5}mathrm{muOmegacdot cm^{2}}$ at a temperature of 100 K.
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The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
Ferroic domain walls are currently investigated by several state-of-the art techniques in order to get a better understanding of their distinct, functional properties. Here, Principal Component Analysis (PCA) of Raman maps is used to study ferroelectric domain walls (DWs) in LiNbO3 and ferroelastic DWs in NdGaO3. It is shown that PCA allows to quickly and reliably identify small Raman peak variations at ferroelectric DWs and that the value of a peak shift can be deduced - accurately and without a-priori - from a first order Taylor expansion of the spectra. The ability of PCA to separate the contribution of ferroelastic domains and DWs to Raman spectra is emphasized. More generally, our results provide a novel route for the statistical analysis of any property mapped across a DW.
Quantum tunneling of domain walls out of an impurity potential in a mesoscopic ferromagnetic sample is investigated. Using improved expressions for the domain wall mass and for the pinning potential, we find that the cross-over temperature between thermal activation and quantum tunneling is of a different functional form than found previously. In materials like Ni or YIG, the crossover temperatures are around 5 mK. We also find that the WKB exponent is typically two orders of magnitude larger than current estimates. The sources for these discrepancies are discussed, and precise estimates for the transition from three-dimensional to one-dimensional magnetic behavior of a wire are given. The cross-over temperatures from thermal to quantum transitions and tunneling rates are calculated for various materials and sample sizes.
The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ.
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between domains with differing order parameter orientations - is a key ingredient for advancing such antiferromagnetic spintronics technologies. However, studies of the intrinsic mechanics of individual antiferromagnetic DWs remain elusive since they require sufficiently pure materials and suitable experimental approaches to address DWs on the nanoscale. Here we nucleate isolated, 180{deg} DWs in a single-crystal of Cr$_2$O$_3$, a prototypical collinear magnetoelectric antiferromagnet, and study their interaction with topographic features fabricated on the sample. We demonstrate DW manipulation through the resulting, engineered energy landscape and show that the observed interaction is governed by the DWs elastic properties. Our results advance the understanding of DW mechanics in antiferromagnets and suggest a novel, topographically defined memory architecture based on antiferromagnetic DWs.
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