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Register a new userQuantum electron splitter based on two quantum dots attached to leads
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Added by
Francisco Dominguez-Adame
Publication date
2006
fields
Physics
and research's language is
English
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Electronic transport properties of two quantum dots side-coupled to a quantum wire are studied by means of the two impurity Anderson Hamiltonian. The conductance is found to be a superposition of a Fano and a Breit-Wigner resonances as a function of the Fermi energy, when the gate voltages of the quantum dots are slightly different. Under this condition, we analyze the time evolution of a Gaussian-shaped superposition of plane waves incoming from the source lead, and found that the wave packet can be splitted into three packets at the drain lead. This spatial pattern manifests in a direct way the peculiarities of the conductance in energy space. We conclude that the device acts as a quantum electron splitter.
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The Andreev transport through a quantum dot coupled to two external ferromagnetic leads and one superconducting lead is studied theoretically by means of the real-time diagrammatic technique in the sequential and cotunneling regimes. We show that the tunnel magnetoresistance (TMR) of the Andreev current displays a nontrivial dependence on the bias voltage and the level detuning, and can be described by analytical formulas in the zero temperature limit. The cotunneling processes lead to a strong modification of the TMR, which is most visible in the Coulomb blockade regime. We find a zero-bias anomaly of the Andreev differential conductance in the parallel configuration, which is associated with a nonequilibrium spin accumulation in the dot triggered by Andreev processes.
We study the spin-resolved transport through single-level quantum dots strongly coupled to ferromagnetic leads in the Kondo regime, with a focus on contact and material asymmetry-related effects. By using the numerical renormalization group method, we analyze the dependence of relevant spectral functions, linear conductance and tunnel magnetoresistance on the system asymmetry parameters. In the parallel magnetic configuration of the device the Kondo effect is generally suppressed due to the presence of exchange field, irrespective of systems asymmetry. In the antiparallel configuration, on the other hand, the Kondo effect can develop if the system is symmetric. We show that even relatively weak asymmetry may lead to the suppression of the Kondo resonance in the antiparallel configuration and thus give rise to nontrivial behavior of the tunnel magnetoresistance. In addition, by using the second-order perturbation theory we derive general formulas for the exchange field in both magnetic configurations of the system.
Spin-polarized transport through a quantum dot strongly coupled to ferromagnetic electrodes with non-collinear magnetic moments is analyzed theoretically in terms of the non-equilibrium Green function formalism. Electrons in the dot are assumed to be coupled to a phonon bath. The influence of electron-phonon coupling on tunnelling current, linear and nonlinear conductance, and on tunnel magnetoresistance is studied in detail. Variation of the main Kondo peaks and phonon satellites with the angle between magnetic moments of the leads is analyzed.
We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and current-current interaction constants are of the same magnitude in BLG.
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.
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