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Register a new userA negative dielectric constant in nano-particle materials under an electric field at very low frequencies
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Authors
C. W. Chu
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The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room temperature. The accompanying induced charge detected opposes the electric field applied in the field-induced negative dielectric constant state. A possible collective effect in the nano-particle aggregates is proposed to account for the observations. Materials with a negative dielectric constant are expected to provide an attraction between similar charges and unusual scattering to electromagnetic waves with possible profound implications for high temperature superconductivity and communications.
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The analogy between magnetism and electricity has long been established by Maxwell in the 19th century, in spite of their subtle difference. While magnetic materials display paramagnetism, ferromagnetism, antiferromagnetism, and diamagnetism, only paraelectricity, ferroelectricity, and antiferrolelectricity have been found in dielectric materials. The missing `diaelectricity may be found if there exists a material that has a dc-polarization opposing the electric field or a negative dielectric susceptibility epsilon-1, with epsilon being the real part of the relative dielectric constant. Both of these properties have been observed in nano-particle aggregates under a dc electric bias field at room temperature. A possible collective effect in the nano-particle aggregates is proposed to account for the observation. `Diaelectricity implies overscreening by polarization to the external charges. Materials with a negative static epsilon are expected to provide attraction to similar charges and unusual scattering to electromagnetic waves with possible profound implications for high temperature superconductivity and communication.
Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is thickness dependent and it can be further tuned by applying an out of plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene, is a direct consequence of the lower permittivity of the surface layers and the in- creasing surface to volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness and electric field dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance, charge screening etc. are important.
The response of polar nanoregions (PNR) in the relaxor compound Pb[(Zn$_{1/3}$Nb$_{2/3}$)$_{0.92}$Ti$_{0.08}$]O$_3$ subject to a [111]-oriented electric field has been studied by neutron diffuse scattering. Contrary to classical expectations, the diffuse scattering associated with the PNR persists, and is even partially enhanced by field cooling. The effect of the external electric field is retained by the PNR after the field is removed. The ``memory of the applied field reappears even after heating the system above $T_C$, and cooling in zero field.
We show that room temperature resistivity of Ba0.5Sr1.5Zn2Fe12O22 single crystals increases by more than three orders of magnitude upon being subjected to optimized heat treatments. The increase in the resistivity allows the determination of magnetic field (H)-induced ferroelectric phase boundaries up to 310 K through the measurements of dielectric constant at a frequency of 10 MHz. Between 280 and 310 K, the dielectric constant curve shows a peak centered at zero magnetic field and thereafter decreases monotonically up to 0.1 T, exhibiting a magnetodielectric effect of 1.1%. This effect is ascribed to the realization of magnetic field-induced ferroelectricity at an H value of less than 0.1 T near room temperature. Comparison between electric and magnetic phase diagrams in wide temperature- and field-windows suggests that the magnetic field for inducing ferroelectricity has decreased near its helical spin ordering temperature around 315 K due to the reduction of spin anisotropy in Ba0.5Sr1.5Zn2Fe12O22.
In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical example, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoelectric responses, the anomalous negative piezoelectricity in CuInP$_2$S$_6$ results from its negative clamped--ion term, which cannot be compensated by the positive internal strain part. Here, we propose a more general rule that having a negative clamped--ion term should be universal among piezoelectric materials, which is attributed to the lag of Wannier center effect. The internal--strain term, which is the change in polarization due to structural relaxation in response to strain, is mostly determined by the spatial structure and chemical bonding of the material. In a low--dimensional piezoelectric material as CuInP$_2$S$_6$, the internal--strain term is approximately zero. This is because the internal structure of the molecular layers, which are bonded by the weak van der Waals interaction, responds little to the strain. As a result, the magnitude of the dipole, which depends strongly on the dimension and structure of the molecular layer, also has a small response with respect to strain. An equation bridging the internal strain responses in low--dimensional and three--dimensional piezoelectrics is also derived to analytically express this point. This work aims to deepen our understanding about this anomalous piezoelectric effect, especially in low--dimensional materials, and provide strategies for discovering materials with novel electromechanical properties.
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